ITO陶瓷靶材溅射过程中结瘤行为研究  

Study on Nodulation Behavior of ITO Ceramic Target during Sputtering

作　　者：罗文 孙本双 刘书含 陈杰[2] 孟将 李树荣 LUO Wen;SUN Benshuang;LIU Shuhan;CHEN Jie;MENG Jiang;LI Shurong(State Key Laboratory of Special Rare Metal Materials, Northwest Rare Metal Materials Research Institute, Shizuishan 753000, China;Henan Province Industrial Technology Rsesarch Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, China)

机构地区：[1]西北稀有金属材料研究院稀有金属特种材料国家重点实验室,宁夏石嘴山753000 [2]郑州大学河南省资源与材料工业技术研究院,河南郑州450001

出　　处：《郑州大学学报（工学版）》2021年第2期87-92,共6页Journal of Zhengzhou University（Engineering Science）

基　　金：国家自然科学基金项目(52004253);宁夏自然科学基金资助项目(2020AAC03507)。

摘　　要：ITO陶瓷靶材的结瘤行为严重影响靶材的应用及其溅射薄膜性能,对结瘤的形成机理进行深入研究具有重要意义。针对不同参数设置的ITO靶材进行磁控溅射,利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)以及X射线光电子能谱仪(XPS)等技术分析靶材在溅射过程中的结瘤行为。结果表明:随着溅射时间的延长,刻蚀环深度增加,靶材表面开始出现结瘤并向刻蚀环蔓延,结瘤的出现使刻蚀环边缘溅射速率降低。结瘤主要由缺O富Sn的非化学计量比ITO组成,是靶材被溅射原子在低溅射速率处反向沉积形成。由于Sn原子在不同区域的溅射差异以及靶面被溅射的O原子易形成O离子,从而使结瘤组分偏离化学计量比。In_(2)O_(3)/Sn(Sn固溶于In_(2)O_(3))晶内的富Sn析出相粒子是溅射早期结瘤形成的主要原因,导电性及导热性极差的结瘤在溅射过程中易积聚电荷并诱发弧光放电,使其在热应力作用下破裂,散落的颗粒会成为新结瘤的诱发点,导致结瘤覆盖率迅速增大。The application and properties of ITO ceramic target were seriously affected by its nodulation behavior,it was extremely important to grasp the formation mechanism of nodulation.So the experimental study on the ITO target was carried out by magnetron sputtering technology under different sputtering parameters.The nodulation behavior of target was analyzed by scanning electron microscope(SEM),X-ray diffraction(XRD)and X-ray photoelectron spectroscopy(XPS).The results showed that the depth of etch ring increased with increasing sputtering time,and then the nodules were formed on the target surface and spread to the etching ring,which reduced the sputtering rate at the edge of etching ring.The nodules were mainly composed of non-stoichiometric ITO,which lacked of O but rich in Sn,and was formed by reverse deposition at low sputtering rate.The nodulation component deviated from its stoichiometric ratio,due to the sputtering difference of Sn atoms in different regions and the O ions were easily formed on target surface.The formation of nodules in the early stage of sputtering was mainly caused by the Sn-rich precipitated particles in In_(2)O_(3)/Sn crystals.And they were easy to accumulate charges and induce arc discharge due to the poor electrical and thermal conductivity,which made them break under the thermal stress.The scattered particles became the new induction points of nodules,resulting in the rapid increase in the coverage of nodules.

关 键 词：ITO靶材 磁控溅射 结瘤 微观组织 结瘤机制 

分 类 号：TB383.2[一般工业技术—材料科学与工程]