InAs/GaSb Ⅱ类超晶格长波红外焦平面探测器研究  

Research on Long-Wavelength Infrared Focal Plane Array Detector Based on Type-II InAs/GaSb Superlattice

作　　者：温涛[1] 邢伟荣[1] 李海燕[1] 李春领[1] 刘铭[1] 李忠贺[1] 郭喜[1] 亢喆[1] 张智超[1] 陈彦冠 WEN Tao;XING Wei-rong;LI Hai-yan;LI Chun-ling;LIU Ming;LI Zhong-he;GUO Xi;KANG Zhe;ZHANG Zhi-chao;CHEN Yan-guan(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2021年第5期1-6,共6页Infrared

摘　　要：InAs/GaSb Ⅱ类超晶格材料是第三代红外焦平面探测器的优选材料。报道了一种面阵规模为320×256、像元中心距为30 m的InAs/GaSb Ⅱ类超晶格长波红外焦平面器件。在77 K时,该器件的平均峰值探测率为7.6×1010 cm·Hz1/2·W^(-1),盲元率为1.46%,响应非均匀性为7.55%,噪声等效温差(Noise Equivalent Temperature Difference,NETD)为25.5 mK。经计算可知,这种器件的峰值量子效率为26.2%,50%截止波长为9.1 m。最后对该器件进行了成像演示。结果表明,该研究为后续的相关器件研制奠定了基础。InAs/GaSb type-Ⅱ superlattice materials are the preferred materials for the third-generation infrared focal plane detectors.An InAs/GaSb type-Ⅱ superlattice long-wavelength infrared focal plane device with array size of 320×256 and pixel pitch of 30 m is reported.At 77 K,the average peak detectivity of the device is 7.6×1010 cm·Hz1/2·W^(-1),the blind element rate is 1.46%,the response non-uniformity is 7.55%,and the noise equivalent temperature difference(NETD)is 25.5 mK.The calculation shows that the peak quantum efficiency of this device is 26.2%,and the 50%cut-off wavelength is 9.1 m.Finally,an imaging demonstration of the device is carried out.The results show that the research has laid the foundation for the subsequent development of related devices.

关 键 词：InAs/GaSbⅡ类超晶格 长波红外 焦平面阵列 

分 类 号：TN215[电子电信—物理电子学]