H_(2)O和O_(3)对热原子层沉积Al_(2)O_(3)薄膜性能研究  

INFLUENCE OF HO AND O ON THERMAL ATOMIC LAYER DEPOSITED AlO FILM PERFORMANCE

作　　者：李士正 许佳辉 叶晓军[1] 柳翠[1] 袁晓[1] 李红波[1] Li Shizheng;Xu Jiahui;Ye Xiaojun;Liu Cui;Yuan Xiao;Li Hongbo(School of Materials Science and Engineering,East China University of Science and Technology,Shanghai 200237,China)

机构地区：[1]华东理工大学材料科学与工程学院,上海200237

出　　处：《太阳能学报》2021年第4期223-228,共6页Acta Energiae Solaris Sinica

基　　金：上海市科学技术委员会科研计划项目(17DZ1201102)。

摘　　要：采用热原子层沉积的方法,以三甲基铝(TMA)为铝源,配合H_(2)O、O_(3)及H_(2)O+O_(3)这3种不同的氧化剂制备Al_(2)O_(3)薄膜并研究Al_(2)O_(3)薄膜的生长、元素分布、薄膜结构和表面钝化质量随氧化剂种类和后退火工艺的变化规律。结果表明,H_(2)O基的Al_(2)O_(3)薄膜具有较高的沉积速率及薄膜折射率,同时具有较低的杂质元素浓度和界面态缺陷密度;O_(3)基的Al_(2)O_(3)薄膜则具有较高的固定负电荷密度和较好的热稳定性。通过在O_(3)工艺中加入H_(2)O,可有效降低Al_(2)O_(3)薄膜中杂质元素浓度和界面缺陷态密度,同时保留O_(3)基Al_(2)O_(3)薄膜中较高的固定负电荷密度,从而在钝化性能上兼具两者的优势。Al_(2)O_(3)films were deposited by thermal atomic layer deposition with trimethylaluminum(TMA)as aluminum source and H_(2)O,O_(3)and H_(2)O+O_(3)as oxidants.The growth,elemental distributions,film structure and surface passivation quality of Al_(2)O_(3)films are investigated as a function of the oxidant species and post-annealing process.It indicates that the H_(2)O based Al_(2)O_(3)films have a higher deposition rate and refractive index,together with the lower impurity elements concentration and interface defects density than the O_(3)based Al_(2)O_(3)films.However,higher fixed charge density and improved thermal stability can be observed on the O_(3)based Al_(2)O_(3)films.By adding H_(2)O to the O_(3)process,the impurity elements concentration in Al_(2)O_(3)films and the interface defects density can be effectively reduced,while the high negative fixed charge density of the O_(3)based Al_(2)O_(3)films is still retained,which combines the advantages of both H_(2)O and O_(3)based Al_(2)O_(3)films in passivation performance.

关 键 词：原子层沉积 氧化铝 硅太阳电池 界面态 表面钝化 固定负电荷 

分 类 号：TN305.2[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]