镀铜膜工艺在高功率输入耦合器中的应用  

Application of Copper Plating Technology in the Fundamental Power Input Coupler

作　　者：张帅 罗积润 王小霞 张瑞 吴质洁 Zhang Shuai;Luo Jirun;Wang Xiaoxia;Zhang Rui;Wu Zhijie(Aerospace Information Research Institute,Chinese Academy of Sciences,Beijing 100094,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院空天信息创新研究院,北京100094 [2]中国科学院大学,北京100049

出　　处：《稀有金属材料与工程》2021年第4期1409-1416,共8页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(61771454)。

摘　　要：高功率输入耦合器是为自由电子激光装置的超导腔传输微波功率的部件。为了提高传输性能,需要在耦合器上镀铜膜。本研究基于2种不同镀铜膜工艺实验,通过EDS线扫描、粗糙度、XRD和残余电阻率(RRR)对比分析在室温(25℃)以及200、400、600和910℃等4种不同温度退火后镀铜膜的性能变化,确定出适合特殊环境条件下高功率输入耦合器波纹管内壁镀铜膜工艺。将这一工艺应用于1.3 GHz高功率输入耦合器镀铜膜。结果表明,铜膜与耦合器内表面的结合力、高低温适应性和微波能量传输效率都能很好地满足实际应用的要求。The fundamental power input coupler is a component of the free electron laser device, which transmits microwave power to the superconducting cavity. In order to improve the transmission performance, the coupler needs to be coated with copper film. In the present paper, the coupler was plated with copper film by electroless plating and electroplating. Though the EDS linear scanning, roughness, X-ray diffraction and residual resistivity ratio, the performance changes of the copper films prepared by these two copper plating methods at room temperature(25 ℃) and after vacuum annealing temperatures(200, 400, 600 and 910 ℃) were investigated. Furthermore, the copper plating technology for the inner surface of bellows of the coupler was determined, and this process was applied to the 1.3 GHz fundamental power input coupler. The results show that the bonding force between the copper film and the inner surface of the coupler and the efficiency of microwave energy transmission can meet the requirements of practical application.

关 键 词：高功率输入耦合器 化学镀铜 电化学镀铜 残余电阻率(RRR) 

分 类 号：TG174.445[金属学及工艺—金属表面处理]