SiC MOSFET模块结温监测研究  

Study on Junction Temperature Monitoring of SiC MOSFET Module

作　　者：李凌云[1,2] 何芹芹 黄德雷 LI Lingyun;HE Qinqin;HUANG Delei(Suqian Economic and Trade Higher Vocational Technical School of Jiangsu,Suqian 223600,China;School of Electronics and Information,Jiangsu University of Science and Technology,Zhenjiang 212003,China;School of Electrical and Power Engineering,China University of Mining and Technology,Xuzhou 221116,China)

机构地区：[1]江苏省宿迁经贸高等职业技术学校,宿迁223600 [2]江苏科技大学电子信息学院,镇江212003 [3]中国矿业大学电气与动力工程学院,徐州221116

出　　处：《电源学报》2021年第3期169-174,共6页Journal of Power Supply

摘　　要：碳化硅金属氧化物半导体场效应管SiC MOSFET(silicon carbide metal oxide semiconductor field effect tra-nsistor)以其优异的材料特性成为一种很有前景的高功率密度和高效率器件,而结温是其设计和工作的一个重要参数,也是健康状态的重要指标。为了状态监控的需求,提出一种受自热影响较少的基于准阈值电压的结温提取方法。首先,从理论层面证实了阈值电压VTH与温度有良好的线性关系,具有负的温度敏感度。然后,实验观察了外部驱动电阻RGext对VTH的影响。最后,结合智能驱动提出了获取准阈值电压的电路,实验结果证实了所提方法的可行性。Owing to its excellent material properties,silicon carbide metal oxide semiconductor field effect tra-nsistor(SiC MOSFET)is becoming a promising device with high power density and high efficiency.As an important design and operating parameter,junction temperature is also an important indicator of health status.For the purpose of state monitoring,a junction temperature extraction method based on quasi-threshold voltage was proposed in this paper,which is less affected by self-heating.First,it was theoretically and experimentally proved that the threshold voltage VTH showed a good linearity with temperature,and this relationship had a negative temperature sensitivity.Then,the effect of external drive resistor RGext on VTH was observed experimentally.Finally,the circuit for obtaining the quasi-threshold voltage was put forward in combination with the intelligent drive,and the feasibility of the proposed method was verified by experimental results.

关 键 词：结温提取 碳化硅(SiC) 金属氧化物半导体场效应管(MOSFET) 阈值电压 

分 类 号：TM23[一般工业技术—材料科学与工程]