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作 者:荣敏敏 张益军[1] 李诗曼 焦岗成 刘伟鑫[3] 王自衡 舒昭鑫 钱芸生[1] Rong Minmin;Zhang Yijun;Li Shiman;Jiao Gangcheng;Liu Weixin;Wang Ziheng;Shu Zhaoxin;Qian Yunsheng(School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing,Jiangsu 210094,China;Science and Technology on Low-Light-Level Night Vision Laboratory,Xi'an,Shaanxi 710065,China;No 808 Institute Shanghai Academy of Spacecraft Technology,Shanghai 201109,China)
机构地区:[1]南京理工大学电子工程与光电技术学院,江苏南京210094 [2]微光夜视技术重点实验室,陕西西安710065 [3]上海航天技术研究院808所,上海201109
出 处:《光学学报》2021年第5期125-133,共9页Acta Optica Sinica
基 金:国家自然科学基金(61771245,61301023);微光夜视技术重点实验室基金(J20200102)。
摘 要:为了获得清洁度更高的InGaAs材料表面,利用氢氟酸溶液、盐酸与水的混合溶液、盐酸与异丙醇的混合溶液,研究了化学清洗方法对材料表面碳污染物和氧化物的去除效果,并在此基础上提出了一种与紫外臭氧清洗相结合的方法。利用扫描聚焦X射线光电子能谱技术,对不同方法清洗后的InGaAs样品表面进行分析,基于样品表面产生的二次电子图像,对表面进行了微区特征分析,精准检测了表面化学成分和表面被腐蚀程度。分析发现,基于氢氟酸溶液的刻蚀会严重腐蚀样品表面,破坏表面结构和成分,而结合了紫外臭氧清洗的基于盐酸和异丙醇混合溶液的刻蚀对样品表面具有更好的清洁效果,能够更好地去除表面的碳污染物和氧化物。To obtain a cleaner InGaAs material surface,the effects of chemical cleaning methods on the removal of InGaAs surface carbon contaminations and oxides are investigated using the hydrofluoric acid solution,the mixed solution of hydrochloric acid and deionized water,and the mixed solution of hydrochloric acid and isopropanol.On this basis,a method combined with ultraviolet-ozone cleaning is proposed.The InGaAs surfaces cleaned by different methods are analyzed using scanning focused X-ray photoelectron spectroscopy.Moreover,the micro-area characteristics of the surface are obtained with the aid of the secondary electron image produced on the sample surface,and the surface chemical element composition and surface corrosion degree are accurately detected.The analysis discloses that the hydrofluoric acid etching seriously corrodes the sample surface and destroys the surface structure and compositions,in contrast,the etching based on the mixed solution of hydrochloric acid and isopropanol etching combined with ultraviolet-ozone cleaning shows a better cleaning effect and can more effectively remove the surface carbon contaminations and oxides.
关 键 词:材料 InGaAs材料 扫描聚焦X射线 表面污染 化学清洗
分 类 号:TN223[电子电信—物理电子学]
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