基于双面盲孔电镀的硅通孔工艺研究  

Research on Through Silicon Via Process Based on Double-Sided Blind Via Plating

作　　者：李明浩 王俊强 李孟委 LI Minghao;WANG Junqiang;LI Mengwei(School of Instrum ent and Electronics,North University of China,Taiyuan 030051,P.R.China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,P.R.China;Nantong Institute of Intelligent Opto-Mechatronics,North University of China,Nantong,Jiangsu 226000,P.R.China)

机构地区：[1]中北大学仪器与电子学院,太原030051 [2]中北大学前沿交叉学科研究院,太原030051 [3]中北大学南通智能光机电研究院,江苏南通226000

出　　处：《微电子学》2021年第2期265-269,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61804137);"173计划"基金资助项目(2017JCJQZD00604)。

摘　　要：针对当前微机电系统(MEMS)发展对小型化封装的需求,设计了一种高可靠性、低成本、高深宽比的硅通孔(TSV)结构工艺流程。该工艺流程的核心是双面盲孔电镀,将TSV结构的金属填充分为正、反两次填充,最后获得了深度为155μm、直径为41μm的TSV结构。使用功率器件分析仪对TSV结构的电学性能进行了测试,使用X光检测机和扫描电子显微镜(SEM)分别观察了TSV结构内部的缺陷分布和填充情况。测试结果证明,TSV样品导电性能良好,电阻值约为1.79×10^(-3)Ω,孔内完全填充,没有空洞。该研究为实现MEMS的小型化封装提供了一种解决方法。According to the urgent demands for the miniaturized packaging of micro-electromechanical systems(MEMS), a technology with high-reliability, low-cost, and high-aspect-ratio through-silicon via(TSV) structure was proposed. The core process of the technology was double-sided blind hole electroplating. The process of metal filling in the TSV structure consisted of front filling and back filling, obtaining a final TSV structure with a depth of 155 μm and a diameter of 41 μm. The electrical performance of the TSV structure was tested by power device analyzer. X-ray inspection machine and scanning electron microscope(SEM) were used to observe the defect distribution and filling conditions inside the TSV structure. The experimental results showed that the TSV samples had a good electrical conductivity and an approximate resistance value of 1.79×10^(-3)Ω. The hole of the sample was fully filled without voids. The research provided a promising strategy for the realization of miniaturized MEMS packaging.

关 键 词：硅通孔 微机电系统封装 双面盲孔电镀 深反应离子刻蚀 

分 类 号：TN405[电子电信—微电子学与固体电子学]