一种3D垂直结构的光电探测器研制  

Research and Manufacture of a 3D Vertical Structure Photodetector

作　　者：戴永红[1] 唐政维[2] 刘新[3] 李雨欣 DAI Yonghong;TANG Zhengwei?;LIU Xin;LI Yuxin(The 24th Research Institute of Chinma Electromics Technology Group Corporation.Chongqing 40060.P.R.China;College of Optoelec.Engineer./Int.Semicomd.College,Chongqing Unriv.of Posts and Telecomm.,Chongqing 400065,P.R.China;School of Electromic Engineering,Chongqing City Management College,Chongqing 401331,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]重庆邮电大学光电工程学院/国际半导体学院,重庆400065 [3]重庆城市管理职业学院智能工程学院,重庆401331

出　　处：《微电子学》2021年第2期281-284,共4页Microelectronics

摘　　要：提出了一种3D垂直结构光电探测器及制作方法。将光电探测器芯片的下电极焊接在基板上,上电极通过金丝连接到放大电路,使得光通过侧面进入本征工层,有效解决了重掺杂死区和金属电极的阻光问题,降低了光损失,减少了复合率,提高了响应度。结在半导体体内,减小了暗电流(表面漏电流),提高了反向击穿电压。结面积的主要部分为平行平面结,有效减小了总的结电容,减小了寄生时间常数,提高了响应速度。A 3 D vertical structure photodetector and its manufacturing method were presented. The lower electrode of the photoelectric detector chip was welded to the substrate, and the upper electrode was connected to the amplifying circuit through the gold wire, so that the light could entere into the intrinsic layer through the side, which effectively solved the problem of heavy doping dead zone and metal electrode blocking light, reduced the light loss, reduced the composite rate, and improved the response degree. The structure of the junction in the semiconductor reduced the surface leakage current and increased the reverse breakdown voltage. The main part of the junction area was the parallel plane junction area, which effectively reduced the total junction capacitance area, reduced the parasitic time constant, and improved the response speed.

关 键 词：光电探测器 重掺杂死区 金属电极挡光 

分 类 号：TN215[电子电信—物理电子学] TN929.11