新型GaAs HEMT器件寄生电容的优化提取方法  

An Optimized Parameter-Extraction Method for Parasitic Capacitance of GaAs HEMT Device

作　　者：化宁 王佳[2] 尚会锋 章泉源 高翔 HUA Ning;WANG Jia;SHANG Huifeng;ZHANG Quanyuan;GAO Xiang(Shanghai Institute of Aeros pace Electromics Techmology,Shanghai 201109.P.R.China;Shanghai Academy Spaceflight Technology,Shanghai 201109.P.R.China)

机构地区：[1]上海航天电子技术研究所,上海201109 [2]上海航天技术研究院,上海201109

出　　处：《微电子学》2021年第2期290-294,共5页Microelectronics

摘　　要：针对优化提取参数的复杂度问题,提出了一种新的GaAs HEMT器件寄生电容的优化提取方法。提取寄生电容时,设置合适的优化范围,进行优化提参。采用三次参数优化,确保优化精度和模型准确性,避免了循环优化,提高了参数提取效率和参数优化效率。该方法不依赖器件的具体结构,减少了对器件结构假设所带来的误差。对17元件小信号等效电路模型参数进行提取,验证了该方法的可靠性。结果表明,S参数与实测S参数的拟合度较好,拟合的最高频率可达30 GHz。Aiming at the complexity of optimizing parameter-extraction, a new parameter-extraction method for parasitic capacitance of GaAs HEMT was proposed. When parasitic capacitance was extracted, an appropriate optimization range was set to carry out optimization reference. The three times parameter optimization was adopted to ensure the optimization accuracy and model accuracy, avoid the cycle optimization, and improve the efficiency of parameter-extraction and parameter-optimizing. This method was independent of the device structure, which reduced the error caused by the assumption of the device structure. The model parameters of 17-element small signal equivalent circuit were extracted, and the reliability of the method was verified. The results showed that the S parameter was fitting well with the measured one, and the highest fitting frequency could reach 30 GHz.

关 键 词：GaAs HEMT 寄生电容 优化方法 参数提取 

分 类 号：TN386[电子电信—物理电子学]