低温氧化技术优化双极器件结构及工艺的研究  

Study Of Low Temperature Oxide Technology Optimize Bipolar Device Structure And Process

作　　者：范伟宏[1] 闫建新[1] 冯荣杰[1] 韩建 FAN Wei-hong;YAN Jian-xin;FENG Rong-jie;HAN Jian(Hangzhou Silan Integrated Circuit Co.,Ltd.)

机构地区：[1]杭州士兰集成电路有限公司

出　　处：《中国集成电路》2021年第6期89-93,共5页China lntegrated Circuit

摘　　要：双极集成电路需要在不影响器件特性的前提下通过缩小基区面积提高电路密度。利用LTO淀积SiO_(2)薄膜替代热氧化SiO_(2)薄膜,用LTO较低淀积温度进行发射区退火替代氧化退火工艺,双极器件的基区和发射区消除了"分凝"和"鸟嘴"现象,具有自然扩散的形貌特征,缩小了基区面积,优化了器件结构,可以有效提高器件集成密度。在基区和发射区工艺控制方面,LTO工艺减少了高温工序,有效节约能源和掺杂材料消耗;该工艺流程比较简短紧凑,有利于实现工艺标准化,减少由于不确定工艺因素造成产品的质量波动。Bipolar integrated circuits increase circuit density by saving base area under no affecting device characteristics.SiO2 film substituting LTO deposited for thermal oxide,and anneal process of emitter area substituting LTO low temperature for thermal oxide temperature,base area and emitter area eliminate segregation and beak,with natural diffusion profile,saving the area of base,optimizing device structure,improving device integration density.Forprocess control of base area and emitter area,LTO process may reduce high temperature processes,and it is beneficial to saving energy and reducing doping material cost;LTO process time is more short and compact,and it is beneficial to process standardization,reducing fluctuations in product quality for uncertain technological factors.

关 键 词：LTO淀积 双极器件 基区 发射区 结构优化 

分 类 号：TN431[电子电信—微电子学与固体电子学]