A super-junction SOI-LDMOS with low resistance electron channel  

作　　者：Wei-Zhong Chen Yuan-Xi Huang Yao Huang Yi Huang Zheng-Sheng Han 陈伟中;黄元熙;黄垚;黄义;韩郑生(College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China [2]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2021年第5期607-612,共6页中国物理B（英文版）

摘　　要：A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.

关 键 词：LDMOS breakdown voltage(BV) specific on resistance(R_(on sp)) figure of merit(FOM) 

分 类 号：TN386.1[电子电信—物理电子学]