分子束外延材料表面平整度的研究  

Study on the film surface flatness by molecular beam epitaxy

作　　者：王丛[1] 高达[1] 师景霞 谭振[1] WANG Cong;GAO Da;SHI Jing-xia;TAN Zhen(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2021年第5期625-628,共4页Laser & Infrared

摘　　要：分子束外延Si基HgCdTe材料的表面平整度对红外焦平面组件的制备有重要的影响。分子束外延的Si基复合衬底作为HgCdTe分子束外延的衬底材料对最终外延材料的表面平整度的影响较大。本文通过研究工艺过程中各外延因素对Si片和衬底材料表面平整度的影响,通过实验发现脱氧工艺的高温影响最大,其次是Si片自身的表面平整度和外延膜层的厚度。因此要获得低表面平整度的Si基复合衬底必须满足以下三个条件:低Si片表面平整度,低脱附工艺温度,低外延膜厚。The surface flatness of molecular beam epitaxy Si-based HgCdTe material has an important influence on the preparation of infrared focal plane components.The Si-based composite substrate of molecular beam epitaxy as the substrate material of HgCdTe molecular beam epitaxy has a greater impact on the surface flatness of the final epitaxial material.In this paper,by studying the influence of various epitaxial factors on the surface flatness of Si wafers and substrate materials during the process,it is found through experiments that the high temperature effect of the deoxidation process is the largest,followed by the surface flatness of the Si wafer itself and thickness of the epitaxial film.Therefore,to obtain a Si-based composite substrate with low surface flatness,the following three conditions must be met:low Si wafer surface flatness,low desorption process temperature,and low epitaxial film thickness.

关 键 词：表面平整度 SI 复合衬底 HGCDTE 

分 类 号：TN213[电子电信—物理电子学]