Artificial nociceptor based on TiO nanosheet memristor  

一种基于TiO2纳米片忆阻器的人工伤害感受器

作　　者：Jinling Lan Gang Cao Jingjuan Wang Xiaobing Yan 兰晋玲;曹刚;王静娟;闫小兵(Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province,College of Electron and Information Engineering,Hebei University,Baoding 071002,China;Department of Materials Science and Engineering,National University of Singapore,Singapore 117576,Singapore)

机构地区：[1]Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province,College of Electron and Information Engineering,Hebei University,Baoding 071002,China [2]Department of Materials Science and Engineering,National University of Singapore,Singapore 117576,Singapore

出　　处：《Science China Materials》2021年第7期1703-1712,共10页中国科学（材料科学（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(61674050 and 61874158);the Project of Distinguished Youth of Hebei Province(A2018201231);the Hundred Persons Plan of Hebei Province(E2018050004 and E2018050003);the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018);the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7);the Outstanding Young Scientific Research and Innovation Team of Hebei University;the Highlevel Talent Research Startup Project of Hebei University(521000981426);the Special Support Funds for National High Level Talents(041500120001 and 521000981429)。

摘　　要：With the development of technology,the learning and memory functions of artificial memristor synapses are necessary for realizing artificial neural networks and neural neuromorphic computing.Owing to their high scalability performance,nanosheet materials have been widely employed in cellular-level learning,but the behaviors of nociceptor based on nanosheet materials have rarely been studied.Here,we present a memristor with an Al/TiO_(2)/Pt structure.After electroforming,the memristor device showed a gradual conductance regulation and could simulate synaptic functions such as the potentiation and depression of synaptic weights.We also designed a new scheme that verifies the pain sensitization,desensitization,allodynia,and hyperalgesia behaviors of real nociceptors in the fabricated memristor.Memristors with these behaviors can significantly improve the quality of intelligent electronic devices.Data fitting showed that the high resistance and low resistance states were consistent with the hopping conduction mechanism.This work promises the application of TiO_(2)-based devices in next-generation neuromorphological systems.人工忆阻突触的学习记忆功能是实现人工神经网络和神经形态计算的必要条件.纳米片材料由于其良好的可扩展性,在细胞级学习水平中得到了广泛的应用,但基于纳米片材料的伤害感受器行为研究却鲜有报道.本文中,我们提出了一种具有Al/TiO_(2)/Pt结构的忆阻器.电铸后,忆阻器呈现出逐渐的电导调节,并能模拟突触功能,如突触重量的增加和降低.我们还设计了一个新的方案来验证真实伤害感受器的痛觉敏感、脱敏、超敏和痛觉过敏行为.具有这些特性的忆阻器可以显著提高智能电子器件的性能.数据拟合表明,高阻和低阻状态符合跳跃导电机制.这项工作使得基于TiO_(2)的器件有望应用于下一代神经形态学系统.

关 键 词：NANOSHEETS NOCICEPTOR MEMRISTORS artificial synapses SENSITIZATION 

分 类 号：TN60[电子电信—电路与系统] TB383.1[一般工业技术—材料科学与工程]