MEMRISTORS

作品数：71被引量：172H指数：7
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相关领域：电子电信自动化与计算机技术更多>>
相关期刊：《Journal of Semiconductors》《Light(Science & Applications)》《Science China(Information Sciences)》《International Journal of Extreme Manufacturing》更多>>
相关基金：国家自然科学基金中国博士后科学基金高等学校学科创新引智计划河北省自然科学基金更多>>
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Leaky integrate-and-fire and oscillation neurons based on ZnO diffusive memristors for spiking neural networks
《Science China Materials》2025年第4期1212-1219,共8页Liang Wang Le Zhang Shuaibin Hua Qiuyun Fu Xin Guo 
supported by the National Natural Science Foundation of China(62471190);the Natural Science Foundation of Hubei Province,China(2022CFA031)。
Diffusive threshold switching(TS)memristors have emerged as a promising candidate for artificial neurons,effectively replicating neuronal functions and enabling spiking neural networks(SNNs)to emulate the low-power pr...
关键词：threshold-switching memristor volatile diffusive memristor oscillation neurons leaky integrate-and-fire neurons spiking neural networks 
Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons被引量：1
《Journal of Semiconductors》2025年第2期98-103,共6页Bowen Zhong Xiaokun Qin Zhexin Li Yiqiang Zheng Lingchen Liu Zheng Lou Lili Wang 
support from the Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(No.L233009);National Natural Science Foundation of China(NSFC Nos.62422409,62174152,and 62374159);from the Youth Innovation Promotion Association of Chinese Academy of Sciences(No.2020115).
Memristors have a synapse-like two-terminal structure and electrical properties,which are widely used in the construc-tion of artificial synapses.However,compared to inorganic materials,organic materials are rarely us...
关键词：ELECTROPOLYMERIZATION POLYDOPAMINE MEMRISTOR threshold switching spiking voltage artificial neuron 
Non-linear ion transport in nanopores for the design of ultracapacitive ionic memristors
《National Science Review》2025年第1期4-5,共2页Panlong Li Stefan Kaskel 
In today’s data-driven world,energy consumption and CO_(2)emissions resulting from digitalization and computation are steadily increasing,which are significant challenges for our society.In the course of natural evol...
关键词：TRANSPORT LIMITATIONS linear 
Thinner 2D α-MoO_(3) makes setting up memristors easier
《Journal of Materiomics》2024年第6期1279-1289,共11页Yukun Hong Shangui Lan Baojun Pan Zhixiang Zhang Bingbing Chen Lijie Zhang Peijian Wang 
The authors acknowledge the support from National Natural Science Foundation of China(Grant Nos.51902061,52072272,62090031).
Two-dimensional(2D)metal oxide α-MoO_(3) shows great potentials because of its very high dielectric constant,air stability and anisotropic phonon polaritons.However,a method to produce ultrathin single crystallineα-...
关键词：Ultrathin molybdenum trioxide Thickness controlling High transferability MEMRISTOR Low power consumption 
Investigating the Effects of V_(2)C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO_(2)-Based Memristors
《Chinese Journal of Electronics》2024年第5期1181-1187,共7页Nan HE Lei WANG Yi TONG 
supported by the 2030 Major Project of the Chinese Ministry of Science and Technology(Grant No.2021ZD0201200);the High-End Foreign Experts Project of the Ministry of Science and Technology(Grant No.G2022178034L);the Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant Nos.KYCX190956 and 4600KYCX220928);the Jiangsu Province Research Foundation(Grant Nos.BK20191202 and 16KJA510003).
Three-atoms-type V_(2)C MXene,an emerging class of transition metal carbides,has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties.However...
关键词：MEMRISTOR V_(2)C MXene First-principles calculation Switching stability Formation mechanism 
Three-dimensional/one-dimensional perovskite heterostructures for stable tri-state synaptic memristors被引量：1
《Science China Materials》2024年第9期2848-2855,共8页Jiaqi Gong Shilei Ji Jintian Li Hudie Wei Weiwei Mao Jing Hu Wen Huang Xuemin He Xing’ao Li Liang Chu 
funded by the National Natural Science Foundation of China(52172205)。
Memristors have great potential in neural network computation.Perovskite memristors exhibit excellent resistive-switching(RS)properties between high resistance state(HRS)and low resistance state(LRS)state under applie...
关键词：MEMRISTOR perovskite heterojunction ONE-DIMENSION (CH_3)_3SPbI_3 synaptic function 
Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors
《Science China Materials》2024年第9期2856-2865,共10页Jing Sun Zhan Wang Xinyuan Wang Ying Zhou Yanting Wang Yunlong He Yimin Lei Hong Wang Xiaohua Ma 
supported by the National Natural Science Foundation of China(62304172,62188102,and 62274130);the Natural Science Basic Research Program of Shaanxi(2022JQ-582 and 2022JQ-684);Guangdong Basic and Applied Basic Research Foundation(2021A1515110020);the Fundamental Research Funds for the Central Universities(ZYTS24119);the Scientific Research Program Foundation of Shaanxi Provincial Education Department(22JK0564)。
As a critical command center in organisms,the brain can execute multiple intelligent interactions through neural networks,including memory,learning and cognition.Recently,memristive-based neuromorphic devices have bee...
关键词：MEMRISTOR physically transient controlled resistive switching behavior information security 
Halide perovskite memristors for optoelectronic memory and computing applications
《Information & Functional Materials》2024年第3期265-281,共17页Xiaohan Zhang Yue Wang Xiaoning Zhao Zhongqiang Wang Xuanyu Shan Haiyang Xu Yichun Liu 
Ministry of Science and Technology of the People's Republic of China,Grant/Award Number:2023YFB4402301;the fund from Jilin Province,Grant/Award Number:20240101018JJ;111 Project,Grant/Award Number:B13013;Fundamental Research Funds for the Central Universities,Grant/Award Number:2412023YQ004;NSFC for Distinguished Young Scholars,Grant/Award Number:52025022;NSFC Program,Grant/Award Numbers:52272140,U23A20568。
Halide perovskites are considered as promising memristive materials for nextgeneration optoelectronic devices.This review concisely summarizes the recent development of halide perovskite memristors and highlights thei...
关键词：artificial vision system halide perovskites MEMRISTOR neuromorphic computation optoelectronic applications 
Tailoring Classical Conditioning Behavior in TiO_(2) Nanowires:ZnO QDs-Based Optoelectronic Memristors for Neuromorphic Hardware被引量：1
《Nano-Micro Letters》2024年第7期265-280,共16页Wenxiao Wang Yaqi Wang Feifei Yin Hongsen Niu Young-Kee Shin Yang Li Eun-Seong Kim Nam-Young Kim 
This work was supported by the Jinan City-University Integrated Development Strategy Project under Grant(JNSX2023017);National Research Foundation of Korea(NRF)grant funded by the Korea government(MIST)(RS-2023-00302751);by the National Research Foundation of Korea(NRF)funded by the Ministry of Education under Grants 2018R1A6A1A03025242 and 2018R1D1A1A09083353;by Qilu Young Scholar Program of Shandong University.
Neuromorphic hardware equipped with associative learn-ing capabilities presents fascinating applications in the next generation of artificial intelligence.However,research into synaptic devices exhibiting complex asso...
关键词：Artificial intelligence Classical conditioning Neuromorphic computing Artificial visual memory Optoelectronic memristors ZnO Quantum dots 
Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D Materials被引量：3
《Nano-Micro Letters》2024年第7期1-30,共30页Hangbo Zhou Sifan Li Kah-Wee Ang Yong-Wei Zhang 
This work was supported by the National Research Foundation,Singapore under Award No.NRF-CRP24-2020-0002.
The conventional computing architecture faces substantial chal-lenges,including high latency and energy consumption between memory and processing units.In response,in-memory computing has emerged as a promising altern...
关键词：2D materials MEMRISTORS Memtransistors Crossbar array In-memory computing 
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