Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D Materials  

作　　者：Hangbo Zhou Sifan Li Kah-Wee Ang Yong-Wei Zhang 

机构地区：[1]Institute of High Performance Computing(IHPC),Agency for Science,Technology and Research(A*STAR),1 Fusionopolis Way,#16-16 Connexis,Singapore 138632,Republic of Singapore [2]Department of Electrical and Computer Engineering,National University of Singapore,4 Engineering Drive 3,Singapore 117583,Republic of Singapore [3]Institute of Materials Research and Engineering,Agency for Science,Technology and Research(A*STAR),2 Fusionopolis Way,Singapore 138634,Republic of Singapore

出　　处：《Nano-Micro Letters》2024年第7期1-30,共30页纳微快报（英文版）

基　　金：This work was supported by the National Research Foundation,Singapore under Award No.NRF-CRP24-2020-0002.

摘　　要：The conventional computing architecture faces substantial chal-lenges,including high latency and energy consumption between memory and processing units.In response,in-memory computing has emerged as a promising alternative architecture,enabling computing operations within memory arrays to overcome these limitations.Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays,rapid response times,and ability to emulate biological synapses.Among these devices,two-dimensional(2D)material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing,thanks to their exceptional performance driven by the unique properties of 2D materials,such as layered structures,mechanical flexibility,and the capability to form heterojunctions.This review delves into the state-of-the-art research on 2D material-based memristive arrays,encompassing critical aspects such as material selection,device perfor-mance metrics,array structures,and potential applications.Furthermore,it provides a comprehensive overview of the current challenges and limitations associated with these arrays,along with potential solutions.The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing,leveraging the potential of 2D material-based memristive devices.

关 键 词：2D materials MEMRISTORS Memtransistors Crossbar array In-memory computing 

分 类 号：TB30[一般工业技术—材料科学与工程] TN321.5[电子电信—物理电子学] TN60[自动化与计算机技术—计算机系统结构] TP333[自动化与计算机技术—计算机科学与技术]