毫米波雷达前端芯片关键技术探讨  

Discussion on the Key Technique of Millimeter-wave Radar Front-end

作　　者：刘兵 李旭光 傅海鹏 马凯学 LIU Bing;LI Xuguang;FU Haipeng;MA Kaixue(School of Microelectronics,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津大学微电子学院,天津300072

出　　处：《电子与信息学报》2021年第6期1485-1497,共13页Journal of Electronics & Information Technology

基　　金：国家重点研发计划(2018YFB2202500)。

摘　　要：毫米波雷达的距离分辨率和最大可工作距离通常受雷达射频信号带宽和发射功率的限制,具有宽工作带宽、高输出功率、高灵敏度、高精度相位控制的毫米波雷达芯片是实现高性能毫米波雷达系统的关键。毫米波雷达芯片的设计难点主要集中在阻抗匹配、噪声降低、功率提升、相位控制等方面。因此,该文针对毫米波雷达前端芯片设计难点的关键解决技术进行探讨和综述。The range resolution and maximum working distance of millimeter-wave radar are usually limited by the RF bandwidth and transmitted power.Millimeter-wave radar front-end chip with wide bandwidth,high transmitted power,high sensitivity and high-precision phase control is crucial to millimeter-wave radar system to achieve high performance.The difficulties of millimeter-wave radar chips mainly focus on impedance matching,noise reduction,transmitted power increase,phase control,etc.Therefore,this article discusses and summarizes the key technique to solution the difficulties of millimeter-wave radar front-end chips.

关 键 词：毫米波雷达 芯片 阻抗匹配 功率合成 相控阵 

分 类 号：TN958[电子电信—信号与信息处理] TN43[电子电信—信息与通信工程]