基于异构忆阻器的1T2M多值存储交叉阵列设计  

Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

作　　者：孙晶茹 李梦圆 康可欣 邾少鹏 Sun Yichuang SUN Jingru;LI Mengyuan;KANG Kexin;ZHU Shaopeng;SUN Yichuang(College of Computer Science and Electronic Engineering,Hunan University,Changsha 410082,China;School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100089,China;School of Physics,Engineering and Computer Science,University of Hertfordshire,Hatfield AL109AB,UK)

机构地区：[1]湖南大学信息科学与工程学院,长沙410082 [2]北京邮电大学电子工程学院,北京100089 [3]英国赫特福德大学物理工程与计算机科学学院,哈特菲尔德英国AL109AB

出　　处：《电子与信息学报》2021年第6期1533-1540,共8页Journal of Electronics & Information Technology

基　　金：国家自然科学基金重大研究计划(91964108);国家自然科学基金(61971185);湖南省高校重点实验室开放基金(20K027)。

摘　　要：忆阻器作为一种新型电子元件,具有尺寸小、读写速度快、非易失性和易于与CMOS电路兼容等特性,是实现非易失性存储器最具发展前景的技术之一。但是已有的多值存储交叉阵列存在电路结构复杂、漏电流和存储密度低等问题,影响了多值存储交叉阵列的实用性。该文提出一种基于异构忆阻器的多值存储交叉阵列,其中存储单元由1个MOS管和两个具有不同阈值电压和Ron阻值的异构忆阻器构成(1T2M),可实现单个电压信号完成4值读写的操作,减少电流通路的同时简化了电路结构。通过PSpice进行仿真验证,表明所提出的1T2M多值存储器交叉阵列与已有工作相比,电路结构更简单,读写速度更快,并较好地克服了漏电流问题。As a new type of electronic component,memristor has the characteristics of small size,fast reading and writing speed,non-volatile and easy to be compatible with CMOS circuits.It is one of the most promising technologies to realize non-volatile memory.However,the existing multi-value storage cross array has problems such as complex circuit structure,sneak path problem and low storage density,which affect the practicability of the multi-value storage cross array.In this paper,a multi-value memory crossbar array based on heterogeneous memristors is proposed,in which the memory cell is composed of one Transistor and two heterogeneous Memristors(1T2M)with different threshold voltages and Ron resistance values.A single voltage signal completes the four-value read and write operation,which reduces the current path and simplifies the circuit structure.Simulation verification by PSpice shows that compared with existing work,the proposed 1T2M multi-value memory crossbar array has simpler circuit structure,higher storage density,faster reading and writing speed,and overcomes better the leakage current problem.

关 键 词：忆阻器 存储器 交叉阵列 漏电流 

分 类 号：TN601[电子电信—电路与系统] TN710