单晶硅表面机械划痕和氧化层在湿法刻蚀中的掩膜行为对比研究  

Comparative Study on the Mask Effect of Mechanical Scratch and Oxide Layer in Wet Etching on Monocrystalline Silicon Surface

作　　者：陈鹏 高健[1] 吴磊 郭剑 余丙军[1] CHEN Peng;GAO Jian;WU Lei;GUO Jian;YU Bingjun(Tribology Research Institute,School of Mechanical Engineering,Southwest Jiaotong University,Chengdu 610031,CHN;Dept.of Mechanical Engineering,University of South China,Hengyang 421001,CHN)

机构地区：[1]西南交通大学机械工程学院摩擦学研究所,成都610031 [2]南华大学机械工程学院,湖南衡阳421001

出　　处：《半导体光电》2021年第2期246-251,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51775462);湖南省自然科学基金项目(2019JJ50518)。

摘　　要：摩擦诱导选择性刻蚀具有加工成本低、流程简单、低加工损伤等优势,是实现单晶硅表面微纳米结构构筑的重要途径。为探究摩擦诱导机械划痕在单晶硅表面微纳加工中的掩膜行为,实验研究了选择性刻蚀中机械划痕掩膜下的线/面结构形貌与高度特征,并将其与氧化层掩膜进行对比。实验发现机械划痕掩膜性能与氧化层无明显差异,并讨论了两种不同掩膜下选择性刻蚀中纳米结构的形貌演变机理。最后,实现了采用不同掩膜的复合纳米图案加工。研究结果可为基于摩擦诱导选择性刻蚀的单晶硅表面高质量可控加工提供依据。Friction-induced selective etching has advantages of low cost,simple operation,and low destruction,thus it is regarded as an important route to realize micro/nanofabrication on monocrystalline silicon surface.To investigate the mask effect of friction-induced mechanical scratch in micro/nanofabrication of silicon surface,the topography and height of line/area structures under mechanical scratch were studied in selective etching and compared with that under oxide layer.It was found that there was no significant difference in mask effect of mechanical scratch and oxide layer,and corresponding evolution mechanism of topography under two different masks was discussed.Finally,the fabrication of composite nano-patterns was achieved by combining mechanical scratch and oxide layer.The present study provides an important theoretical basis for the high-quality and controllable processing of silicon surface,which is based on friction-induced selective etching.

关 键 词：摩擦诱导选择性刻蚀 机械划痕 氧化层 掩膜 单晶硅 

分 类 号：TH117.1[机械工程—机械设计及理论] TN305.7[电子电信—物理电子学]