电子背散射衍射的测试技术进展  

Researchprogress of electron backscatter diffraction in the area of characterization technology

作　　者：高尚 黄梦诗 王君兆 马清 GAO Shang;HUANG Mengshi;WANG Junzhao;MA Qing(School of Materials Science and Engineering,Harbin Institute of Technology(Shenzhen),Shenzhen 518055,China;Meixin Consulting Co.,Ltd.,Shenzhen 518055,China)

机构地区：[1]哈尔滨工业大学(深圳)材料科学与工程学院,广东深圳518055 [2]深圳市美信咨询有限公司,广东深圳518055

出　　处：《材料科学与工艺》2021年第3期8-15,共8页Materials Science and Technology

基　　金：教育部产学合作协同育人项目(201802284007);深圳市教育科学规划项目(ybfz18277);哈工大创新实验项目(INEP1013)。

摘　　要：电子背散射技术(EBSD)因可以获得晶体结构和取向信息而成为SEM的重要补充,在金属、半导体、矿物和陶瓷材料等领域的作用日益重要。更高的分辨率、更高的速度和效率是对EBSD技术提出的发展需求。本文在简述EBSD技术基础原理的基础上,重点评述了其在提高空间分辨率(透射菊池衍射(TKD))及提升处理速度和表征效率(CMOS和直接电子探测相机)方面的研究进展,并对EBSD技术的未来发展方向进行了展望。Electron backscatter diffraction(EBSD)technology is an important supplement to scanning electron microscope(SEM)since it can acquire crystal structure and orientation information,and its role in the fields of metals,semiconductors,minerals,and ceramic materials has become increasingly significant.Higher resolution,higher speed and efficiency are the development requirements for EBSD technology.Based on a brief description of the basic principles of EBSD technology,this paper reviews the research progress of EBSD technology in improving spatial resolution(Transmission Kikuchi Diffraction,TKD),processing speed,and characterization efficiency(CMOS and direct electron detection cameras),and the prospect of the future development of EBSD technology is given.

关 键 词：扫描电镜 EBSD TKD CMOS EBSD探测器 

分 类 号：O722.7[理学—晶体学] TG115.215.3[金属学及工艺—物理冶金]