基于孪生靶的磁控溅射系统薄膜厚度均匀性的研究  

Study on Film Thickness Uniformity of Magnetron Sputtering System Based on Twin Target

作　　者：魏博洋 刘冬梅[1] 付秀华[1] 张静[1] 汪洋 耿煜 Wei Boyang;Liu Dongmei;Fu Xiuhua;Zhang Jing;Wang Yang;Geng Yu(School of Opto-Electronic Engineering,Changchun University of Science and Technology,Changchun,Jilin 130022,China;Optorun(Shanghai)Co.,Ltd.,Shanghai 200444,China)

机构地区：[1]长春理工大学光电工程学院,吉林长春130022 [2]光驰科技(上海)有限公司,上海200444

出　　处：《光学学报》2021年第7期214-220,共7页Acta Optica Sinica

基　　金：吉林省重大科技攻关专项(20190302095GX)。

摘　　要：磁控溅射系统中薄膜厚度的均匀性是关键指标之一。通过分析磁场强度、靶材与基板的距离和气体压强对Si_(3)N_(4)和SiO_(2)两种薄膜厚度均匀性的影响,借助Langmuir探针分析等离子体的密度,并采用二进制阶梯式充气方式调整纵向的均匀性。通过对靶材加载正弦半波电压并使用MATLAB软件确定振幅及相位参数,从而调整横向的均匀性。实验结果表明,对于Si_(3)N_(4)膜层,其在横向上、中和下的均匀性分别为±1.27%、±0.62%和±1.33%,纵向的均匀性为±0.33%;对于SiO_(2)膜层,其在横向上、中和下的均匀性分別为±1.12%、±0.42%和±1.23%,纵向的均匀性为±0.25%。Film thickness uniformity in a magnetron sputtering system is one of the key indicators.The effects of magnetic field intensity,distance between target and substrate and gas pressure on the thickness uniformity of Si_(3)N_(4),and SiO_(2)films are analyzed.The plasma density is analyzed by using Langmuir probe,and the longitudinal uniformity is adjusted by binary gradient inflation mode.By loading sine half-wave voltage to the target and using MATLAB software to determine the amplitude and phase parameters,so as to adjust the uniformity of the transverse.The experiment results show that for the Si_(3)N_(4) film,ihe transverse uniformity is ±1.27%,±0.62%,and ±1.33% respectively at the top,middle,and bottom,and the longitudinal uniformity is±0.33%.For the Si_(3)N_(4) film,the transverse uniformity is ± 1.12%,it ±0.42%,and ±1.23% respectively at the top,middle,and bottom,and the longitudinal uniformity is±0.25%.

关 键 词：薄膜 厚度均匀性 磁控溅射 孪生靶 等离子体密度 二进制梯度充气方式 正弦半波 

分 类 号：O484[理学—固体物理]