新型RHBD抗多节点翻转锁存器设计  

Novel Radiation Hardening by Design Latch for Tolerating Multiple-Node Upset

作　　者：郭靖 李强 宿晓慧[2] 孙宇[3] Guo Jing;Li Qiang;Su Xiaohui;Sun Yu(School of Instrument and Electronics,North University of China,Taiyuan 030051;Key Laboratory of Silicon Device Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029;Component Testing Center,China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 510610)

机构地区：[1]中北大学仪器与电子学院,太原030051 [2]中国科学院微电子研究所硅器件与集成研发中心,北京100029 [3]工业和信息化部电子第五研究所元器件检测中心,广州510610

出　　处：《计算机辅助设计与图形学学报》2021年第6期963-973,共11页Journal of Computer-Aided Design & Computer Graphics

基　　金：国家自然科学基金(61604133).

摘　　要：在纳米数字锁存器中,多节点翻转(multiple-node upset,MNU)正持续增加.虽然现有基于互连单元的抗辐射加固设计(radiation hardening by design,RHBD)的锁存器可以恢复所有MNU,但是需要更多的敏感节点和晶体管.为了在获得高可靠性的同时降低硬件开销,提出利用辐射翻转机制进行加固的方法.首先,通过使用屏蔽晶体管减少敏感节点,进而降低使用的晶体管数;然后,将2个单元内的上拉晶体管进行交叉互连,从而构造出一个可抗MNU翻转的RHBD锁存器.在65 nm工艺下,与现有基于互连技术的RHBD锁存器相比,提出的RHBD锁存器可平均减少12.82%的面积,319.22%的延迟和10.66%的功耗.In nanometer digital latches,multiple-node upsets(MNU)are likely to occur.Although some existing ra-diation hardening by design(RHBD)latches based on the interlocked cells can recover all MNUs,they require more sensitive nodes and transistors.To obtain higher reliability and lower hardware redundancy,the radiation upset mechanism is utilized.First,the masked transistors are used to reduce the number of sensitive nodes,thus reducing the number of transistors.Second,two cells are interlocked by using their pull-up transistors,and then a RHBD latch with the MNU tolerance capability is proposed.Compared with the existing RHBD latches based on the interlocking techniques in 65 nm process,the proposed latch can reduce 12.82%area,319.22%delay and 10.66%power on av-erage.

关 键 词：纳米集成电路 抗辐射加固设计 锁存器 多节点翻转 

分 类 号：TP391[自动化与计算机技术—计算机应用技术]