30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application  

作　　者：Xiuli Li Linzhi Peng Zhi Liu Zhiqi Zhou Jun Zheng Chunlai Xue Yuhua Zuo Baile Chen Buwen Cheng 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China [4]Beijing Academy of Quantum Information Sciences,Beijing 100193,China

出　　处：《Photonics Research》2021年第4期494-500,共7页光子学研究（英文版）

基　　金：National Natural Science Foundation of China(61774143,61874109,61975121,61975196);National Key Research and Development Program of China(2018YFB2200501,2019YFB2203400).

摘　　要：We report the demonstration of a normal-incidence p-i-n germanium-tin(Ge_(0.951)Sn_(0.049))photodetector on silicon-on-insulator substrate for 2μm wavelength application.The DC and RF characteristics of the devices have been characterized.A dark current density under−1 V bias of approximately 125 mA/cm^(2) is achieved at room temperature,and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2μm under−1 V reverse bias.In addition,a 3 dB bandwidth(f_(3dB))of around 30 GHz is achieved at−3 V,which is the highest reported value among all group III–V and group IV photodetectors working in the 2μm wavelength range.This work illustrates that a GeSn photodetector has great prospects in 2μm wavelength optical communication.

关 键 词：2μm GeSn SOI 

分 类 号：TN36[电子电信—物理电子学]