氮化镓毫米波功放技术发展  

Review on GaN-Based mm-Wave Power Amplifier Technology

作　　者：郝跃[1,2] 马晓华[1,2] 杨凌[1,2] HAO Yue;MA Xiaohua;YANG Ling(National Engineering Research Center of Wide Band‑Gap Semiconductor,Xidian University,Xi’an 710071,Shaanxi,China;School of Microelectronics,Xidian University,Xi’an 710071,Shaanxi,China)

机构地区：[1]西安电子科技大学宽禁带半导体国家工程研究中心,陕西西安710071 [2]西安电子科技大学微电子学院,陕西西安710071

出　　处：《上海航天（中英文）》2021年第3期35-45,共11页Aerospace Shanghai（Chinese&English）

基　　金：国家自然科学基金(62090014,61704124,61534007);国家重大基础研发项目(2018YFB1802100)。

摘　　要：氮化镓(GaN)毫米波功放器具有工作频率高、输出功率大、功率转换效率高等优势,在新一代移动通信、高分辨毫米波成像雷达等领域具有广阔的应用前景。本文综述了国内外GaN毫米波功率器件发展历史和低损耗栅结构、短沟道抑制技术、寄生电阻抑制技术等关键技术特点,综合分析了适合Ka-W波段GaN单片毫米波集成电路(MMIC)功放的架构和设计方法,提出了未来我国在高效率、高功率、高频带、多功能集成GaN毫米波芯片领域开展更深入研究的建议。GaN-based mm-wave power amplifiers(PAs)are promising candidates for the applications to the nextgeneration wireless communication,high-resolution radar,etc.due to their advantages such as high working frequency,large output power,and high power conversion efficiency.In this paper,a review on the development evolution of GaN-based mm-wave power devices and key techniques such as low-loss gate design,solutions to short channel effects,and approaches for overcoming the influence of low resistance contact is carried out.Several architectures and design methods for GaN-based mm-wave monolithic integrated circuit(MMIC)power amplifiers(PAs)suitable for Ka-W band are comprehensively analyzed.It is suggested that GaN-based nm-wave chips with high efficiency,large output power,highe frequency,wider band,and multiple functions should be further studied in the future.

关 键 词：氮化镓 毫米波功放器 毫米波器件 单片毫米波集成电路 

分 类 号：TN385[电子电信—物理电子学] TN722.1