Sol-Gel法制备B-N共掺ZnO薄膜及光学性能研究  

Preparation and optical properties of B-N Co-doped ZnO films by Sol-Gel method

作　　者：王玉新[1] 褚浩博 赵莉 蔺冬雪 李真 WANG Yuxin;CHU Haobo;ZHAO Li;LIN Dongxue;LI Zhen(School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China)

机构地区：[1]辽宁师范大学物理与电子技术学院,辽宁大连116029

出　　处：《辽宁师范大学学报（自然科学版）》2021年第2期183-187,共5页Journal of Liaoning Normal University:Natural Science Edition

基　　金：辽宁省教育厅科学技术研究项目(LJ2019006)。

摘　　要：实验将B和不同含量的N元素掺入ZnO薄膜中,利用溶胶-凝胶(Sol-Gel)旋涂工艺分别在玻璃和硅衬底上制备B-N共掺ZnO薄膜.用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计(UV-Vis)和光致发光谱(PL)对B-N掺杂样品薄膜的晶体结构、表面形貌及光学性能进行表征.结果表明,B-N共掺后的薄膜样品,与未掺杂样品和B单掺样品薄膜相比,薄膜结构仍为六方纤锌矿相,且沿ZnO(002)衍射峰择优生长.随着N掺杂量的增加,样品的(002)衍射峰的强度先增强再减弱,当N掺杂量为3.0 at%时,衍射峰强度最强,更适合薄膜生长.此时c轴取向相对较好,结晶度高,薄膜表面性能最佳,透过率在90%左右,禁带宽度达到3.51 eV,紫外发光峰受到抑制.In the experiment,B-N co-doped ZnO films were prepared on glass and silicon substrates by Sol-Gel spin coating process.The crystal structure,surface morphology and optical properties of B-N doped films were characterized by X-ray diffractometry(XRD),scanning electron microscopy(SEM),UV-visible spectrophotometer(UV-Vis)and photoluminescence spectroscopy(PL).The results show that,compared with the undoped and B-mono-doped films,the films of B-N co-doped films still exhibit a hexagonal wurtzite structure and grow preferentially along the ZnO(002)diffraction peak;with the increase of N doping amount,the strength of the samples(002)diffraction peak first increase then decrease.When N doping amount is 3.0 at%,the diffraction peak intensity is the strongest,and more suitable for thin film growth,the film surface through rate is about 90%,the forbidden band width is 3.51 eV,and the ultraviolet light emitting peak is restrained.

关 键 词：B-N共掺 透过率 光致发光 溶胶-凝胶法 ZNO薄膜 

分 类 号：O484.1[理学—固体物理]