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作 者:彭龙新[1] 戴家赟 王钊 贾晨阳 PENG Longxin;DAI Jiayun;WANG Zhao;JIA Chenyang(Nanjing Electronic Devices Institutes,Nanjing 210016,China;The National Key Lab of Microwave&Millimeter Wave Circuits and Modules,Nanjing 210016,China)
机构地区:[1]南京电子器件研究所,南京210016 [2]微波毫米波电路与模块国家重点实验室,南京210016
出 处:《电子与封装》2021年第6期74-79,共6页Electronics & Packaging
摘 要:提出了一种电流垂直流动的纵向导电PIN二极管集成限幅器。根据功率要求,确定了PIN的P+、I和N+层浓度和厚度等参数,并设计了工艺实现方案和加工方法,成功研制的SiC衬底Si PIN限幅器面积为3.3 mm×3.1 mm,在3.5 GHz频率下,能够持续承受200 W连续波功率,300 W、400 W、500 W、600 W、700 W不同脉冲功率各10 min,且输出漏电平仅为10.3~13.7 dBm。受接头和电缆等功率承受能力的限制以及大功率源的缺乏,没能往更大功率进行实验。测试结果验证了电流垂直PIN异质集成的可行性和PIN二极管纵向导电构思的先进性,大幅提高了功率容量密度和功率承受能力。A novel integrated vertical PIN limiter was submitted firstly.Structure parameters such as thickness and concentration of layers P+,I and N+were determined according to power requirement,and implementation processes and technologies were designed.The successfully developed limiter with SiC substrate and a size of 3.3 mm×3.1 mm not only could continuously endure continuous wave(CW)power of 200 W,different pulse power of 300 W,400 W,500 W,600 W,700 W at frequency of 3.5 GHz for 10 minutes,but also only 10.3-13.7 dBm output leakage level.Because of the lack of higher power source and the limited power ability of the connectors and cables,much higher power experiments will be proceed in the future.The measurement results verified the feasibility of heterogeneous integration,and the advancement of vertical PIN structure,which largely increased the limiter's power endurance.
分 类 号:TN43[电子电信—微电子学与固体电子学] TN722.3
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