AlN单晶衬底的制备及研究进展  

Progress in Preparation and Research of AlN Single Crystal Substrate

作　　者：齐志华[1] QI Zhihua(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工业专用设备》2021年第3期1-7,共7页Equipment for Electronic Products Manufacturing

摘　　要：氮化铝(AlN)作为直接带隙半导体且禁带宽度为6.2 eV,使其在深紫外光电子器件(如半导体激光器、日盲光探测器等)、高频大功率射频器件等领域具有广泛的应用前景,而高性能器件的实现需要高质量AlN衬底作为基础。对AlN材料的基本性质进行了阐述,着重对AlN单晶衬底的制备方法进行了介绍:物理气相传输法(PVT)、氢化物气相外延法(HVPE)和基本元素气相沉积法(EVPE),并对AlN材料在光学、电学、化学、磁学领域的应用进行了展望。As a direct bandgap semiconductor with a 6.2 eV band gap,aluminum nitride(AlN)has a wide range of applications in deep ultraviolet optoelectronic devices(such as semiconductor lasers,solar-blind optical detectors,etc.)and high-frequency and high-power RF devices.However,the realization of high-performance devices requires high-quality AlN substrates.The basic properties of AlN material are discussed.The preparation methods of AlN single crystal substrate are emphatically introduced,such as physical vapor transport(PVT),hydride vapor phase epitaxy(HVPE)and elementary source vapor phase epitaxy(EVPE).The application of AlN materials in optical,electrical,chemical and magnetic fields is briefly prospected.

关 键 词：氮化铝(AlN) 物理气相传输法(PVT) 氢化物气相外延法(HVPE) 基本元素气相沉积法(EVPE) 

分 类 号：TN304.05[电子电信—物理电子学]