Micro-LED显示器量化生产关键技术  

Key Technology for Quantification Production of Micro-LED Display

作　　者：蔡克新 CAI Kexin(CETC Fenghua Information-Equipment Co.,Ltd.,Tai Yuan 030024,China)

机构地区：[1]中电科风华信息装备股份有限公司,山西太原030024

出　　处：《电子工业专用设备》2021年第3期29-34,共6页Equipment for Electronic Products Manufacturing

摘　　要：为快速推动Micro-LED显示器产业化发展,结合Micro-LED微显示器的性能特点、制造工艺流程和产品应用优势,重点分析了基于硅/蓝宝石衬底的GaN外延生长技术、芯片侧壁原子层沉积技术、芯片转移和晶圆级键合等技术。通过显示产业材料、工艺设备、芯片制造、终端应用全产业链的上下游协同创新,快速突破Micro-LED量化生产关键技术,必将提升Micro-LED的产业化技术能力,带来新一轮显示技术升级换代。In order to quickly promote the industrialization of micro-LED display development,combined with the performance characteristics,manufacturing process and product application advantages of micro-LED display,emphatically analyzes the GaN epitaxial growth technology based on silicon/sapphire substrate,chip side wall atomic layer deposition technology,chip transfer and wafer level bonding technology.Through the upstream and downstream collaborative innovation of the whole industry chain of display industry materials,process equipment,chip manufacturing and terminal application,the key technologies of micro-LED quantitative production can be quickly broken through,which will surely enhance the industrial technology capacity of micro-LED and bring a new round of display technology upgrading and upgrading.

关 键 词：新型平板显示 微缩化发光二极管 有机化合物化学气相沉积 原子层淀积 晶圆键合 

分 类 号：TN405[电子电信—微电子学与固体电子学]