高量子效率中波InAs/GaSb Ⅱ类超晶格探测器分子束外延生长及特性  

Molecular beam epitaxy growth and characteristics of the high quantum efficiency InAs/GaSb type-Ⅱ superlattices MWIR detector

作　　者：陈凯豪 徐志成[1] 梁钊铭 朱艺红 陈建新[1] 何力[1] CHEN Kai-Hao;XU Zhi-Cheng;LIANG Zhao-Ming;ZHU Yi-Hong;CHEN Jian-Xin;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2021年第3期285-289,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,61534006,61505237,61505235);the National Key Research and Development Program of China(2016YFB0402403);the Youth Innovation Promotion Association,CAS(2016219);the Fund of Shanghai Science and Technology Foundation(16JC1400403).

摘　　要：基于分子束外延(MBE)生长技术获得了高量子效率的InAs/GaSbT2SLs中波红外(MWIR)光电探测器结构材料,表现出了层状结构生长的光滑表面和出色的晶体结构均匀性。此超晶格中波红外探测器的50%截止波长约为5.5μm,峰值响应率为2.6 A/W,77 K下量子效率超过了80%,与碲镉汞的量子效率相当。在77 K,-50 mV偏压下的暗电流密度为1.8×10^(-6)A/cm^(2),最大电阻面积乘积(RA)(-50 mV偏压)为3.8×10^(5)Ω·cm^(2),峰值探测率达到了6.1×10^(12)cm Hz^(1/2)/W。A very high quantum efficiency InAs/GaSb T2SL mid-wavelength infrared(MWIR)photodetector has been grown by molecular beam epitaxy(MBE).The T2SL detector structure material exhibited smooth surface with step-flow growth and excellent structural homogeneity.The 50%cut-off wavelength was about 5.5μm.The peak current responsivity was 2.6 A/W corresponding to a quantum efficiency over 80%at 77 K,which was com⁃parable to that of MCT.At 77 K,the dark current density at-50 mV bias was 1.8×10^(-6) A/cm^(2) and the resistancearea product(RA)at maximum(-50 mV bias)was 3.8×10^(5)Ω·cm^(2).The peak detectivity was calculated to be 6.1×10^(12) cm Hz^(1/2)/W.

关 键 词：分子束外延 高量子效率 中波红外 

分 类 号：TN304.2[电子电信—物理电子学] O484.1[理学—固体物理]