化学气相渗透法制备碳化硅界面涂层的沉积动力学研究  

Deposition Kinetics of SiC Interfacial Coatings Prepared by Chemical Vapor Infiltration

作　　者：戴建伟 何利民 申造宇 刘冠熙 甄真 许振华 牟仁德 DAI Jian-wei;HE Li-min;SHEN Zao-yu;LIU Guan-xi;ZHEN Zhen;XU Zhen-hua;MU Ren-de(Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material,Beijing Institute of Aeronautical Materials,Beijing 100095,China)

机构地区：[1]北京航空材料研究院航空材料先进腐蚀与防护航空科技重点实验室,北京100095

出　　处：《装备环境工程》2021年第6期22-29,共8页Equipment Environmental Engineering

基　　金：自主创新专项基金(JK65190536)。

摘　　要：目的研究沉积温度对SiC界面涂层微观形貌、结构和成分的影响,探讨SiC界面涂层的沉积动力学和沉积机理。方法采用Factsage软件计算MTS-H2反应物体系热力学平衡后产物组成,采用化学气相渗透法(CVI)在碳化硅纤维上制备SiC界面涂层,采用SEM、TEM、XRD等分析测试技术对SiC涂层形貌、结构和成分进行分析。结果在860~1060℃温度范围内,MTS-H2体系平衡后的主要产物有SiC、C等,并在该温度范围采用CVI工艺制备出了SiC界面涂层。结论在860~1060℃温度范围内,提高沉积温度有利于增加SiC的产率。温度低于960℃时,制备的SiC界面涂层表面光滑;高于1060℃时,得到了表面具有团簇结构的涂层,并且随着沉积温度的升高,涂层的结晶度提高。沉积动力学计算结果表明,温度低于1060℃时,SiC的沉积过程受表面反应控制;温度高于1060℃时,沉积过程受扩散控制。采用CVI工艺制备出了单一立方相的SiC界面涂层,并且(111)晶面为SiC颗粒的优先生长晶面。This paper aims to study the influence of deposition temperature on the morphology,structure and composition of SiC interfacial coatings and to discuss the deposition kinetics and mechanism of it.Factsage software was used to calculate the product composition of MTS-H2 system after thermodynamic equilibrium.SiC interfacial coatings were prepared on SiC fibers by chemical vapor infiltration(CVI).The morphology,structure and composition of the coatings were analyzed by SEM,TEM and XRD.The main products were SiC and C of MTS-H2 system after thermodynamic equilibrium in the temperature range of 860~1060℃.In this temperature range,SiC interfacial coatings were prepared by CVI.In the temperature range of 860~1060℃,the increase of deposition temperature can improve the yield of SiC.When the temperature is lower than 960℃,the surface of SiC interfacial coating is smooth;when the temperature is higher than 1060℃,clusters appear on the surface of the coatings.With the increase of deposition temperature,the crystallinity of the coating increases.The deposition kinetics results showed that the deposition process of SiC coatings was controlled by surface reaction when the temperature was lower than 1060℃and controlled by diffusion when it was higher than 1060℃.The SiC interfacial coatings with single cubic phase were prepared by CVI and(111)crystal plane was the preferred growth crystal plane of SiC particles.

关 键 词：化学气相渗透 SiC界面涂层 热力学计算 沉积温度 沉积动力学 

分 类 号：TB332[一般工业技术—材料科学与工程]