Ti基吸气剂制备及其在MEMS晶圆级真空封装中的应用  

Preparation of Titanium-Based Getter and Its Application on MEMS Wafer-Level Vacuum Packaging

作　　者：刘磊 王帆 喻磊 周魁 许磊 Liu Lei;Wang Fan;Yu Lei;Zhou Kui;Xu Lei(College of Information Science and Technology,University of Science and Technology of China,Hefei 230000,China;East China Institute of Photo-Electron IC,Bengbu 233000,China)

机构地区：[1]中国科学技术大学信息科学技术学院,合肥230000 [2]华东光电集成器件研究所,安徽蚌埠233000

出　　处：《微纳电子技术》2021年第5期439-445,共7页Micronanoelectronic Technology

基　　金：“十三五”装备预研共用技术和领域基金资助项目(61409230704)。

摘　　要：采用倾斜溅射工艺制备了一种Cr/Ti/Ni三层金属吸气剂薄膜,其中Ti薄膜作为主吸气层,Cr薄膜为沉积在Ti下方的阻挡层,Ni薄膜为覆盖在Ti上方的保护层。在350℃高温激活后,吸气剂初始吸气速率大于100 cm^(3)·s^(-1)·cm^(-2),30 min内吸气容量大于40 Pa·cm^(3)·cm^(-2),接近国外先进吸气剂的吸气性能指标。利用一种特殊的立体掩膜在微电子机械系统(MEMS)盖帽深腔内制备吸气剂,并将盖帽用于陀螺仪的晶圆级真空封装。对封装好的陀螺仪芯片进行微腔室残余气体分析,陀螺仪内部封装真空度达到1 Pa量级,气体成分均为惰性气体,表明吸气剂在真空封装中发挥了重要作用。A Cr/Ti/Ni three-layer metal getter film was prepared by inclined sputtering process, in which the Ti film was used as the main sorption layer, the Cr film was the barrier layer deposited under the Ti film, and the Ni film was the protective layer overlaid on the Ti film. After the activation at a high temperature of 350 ℃, the initial sorption speed of the getter is greater than 100 cm^(3)·s^(-1)·cm^(-2), and the sorption volume of the getter in 30 min is greater than 40 Pa·cm^(3)·cm^(-2), which are close to the gettering performance indexes of the advanced foreign getter. A special stereo mask was used to prepare the getter in the deep cavity of the micro-electrome-chanical system(MEMS) cap, then the cap was used for wafer-level vacuum packaging of a gyroscope. The analysis of the micro-chamber residual gas was carried out for the packaged gyroscope chip. The encapsulation vacuum degree inside the gyroscope reaches a level of 1 Pa, and the gas components are all inert gases, indicating that the getter plays an important role in vacuum packaging.

关 键 词：微电子机械系统(MEMS) 晶圆级封装 陀螺仪 Ti基吸气剂 立体掩膜 

分 类 号：TN104.8[电子电信—物理电子学] TN305.94