高分子辅助沉积法制备Sm_(x)Nd_(1-x)NiO_(3)外延薄膜  

Sm_(x)Nd_(1-x)NiO_(3)Thin-Films with Tunable Metal-Insulator Transition Grown by Polymer-Assisted Deposition

作　　者：姚丹 汪伟伟 童瑞雪 Yao Dan;Wang Weiwei;Tong Ruixue(School of Mathematic&Physics,Anhui Jianzhu University,Hefei 230601,China;Department of Materials,Hefei Gotion High-Tech Power Energy Co.,Ltd,Hefei 230011,China;Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei 230026,China)

机构地区：[1]安徽建筑大学数理学院,安徽合肥230601 [2]合肥国轩高科动力能源有限公司工程研究总院,安徽合肥230011 [3]中国科学技术大学合肥微尺度物质科学国家研究中心,安徽合肥230026

出　　处：《稀有金属材料与工程》2021年第5期1518-1522,共5页Rare Metal Materials and Engineering

基　　金：Natural Science Foundation of Anhui Jianzhu University(2019QDZ63)。

摘　　要：采用高分子辅助沉积法制备掺杂不同钐(Sm)含量的Sm_(x)Nd_(1-x)NiO_(3)外延薄膜(钐掺杂量x=0.5,0.55,0.6)。X射线衍射(特征θ-2θ扫描、摇摆曲线和φ-scan)和扫描电子显微镜的测试结果表明,制备的薄膜结晶性和外延性良好,与衬底的(001)取向保持一致。电阻率-温度曲线表明制备的外延薄膜均表现出金属绝缘体转变现象。随着Sm掺杂量的提高,金属绝缘体转变温度逐渐升高;当;x=0.55时,外延薄膜的转变温度在室温附近。并且高分子辅助沉积法可以简单有效地制备热致变色外延薄膜。The epitaxial Sm_(x)Nd_(1-x)NiO_(3)(x=0.5,0.55,0.6,SNNO)thin films with(001)-oriented single-crystal LaAlO3 substrates were fabricated by a chemical solution deposition technique,namely polymer-assisted deposition(PAD)under the ambient oxygen annealing.X-ray diffractionθ-2θscan,rocking curve measurement,φ-scan and scanning electron microscopy were used to study the SNNO characteristics.The results reveal the good crystallinity and heteroepitaxy of these SNNO films.Temperature dependence of the resistivity indicates that all the films show a clear Mott metal-insulator transition(MIT)and the transition temperature(TMI)shifts to higher temperature with the increase of Sm content.The epitaxial Sm0.55Nd0.45NiO3 thin films exhibit MIT near room temperature.The successful growth of high quality SNNO films with room temperature transition by economic and facile PAD method shows great potential in practical application of nickelate.

关 键 词：镍酸盐 金属绝缘体转变 外延膜 高分子辅助沉积法 

分 类 号：TB383.2[一般工业技术—材料科学与工程]