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作 者:刘妍 杨晓峰[1] 闫成章 陈骞 温飘 五十岚征辉 Liu Yan;Yang Xiaofeng;Yan Chengzhang;Chen Qian;Wen Piao;Igarashi Seiki(School of Electrical Engineering Beijing Jiaotong University,Beijing 100044,China;Electric Power Research Institute State Grid,Zhejiang Electric Power Co.Ltd,Hangzhou 310014,China;Key Laboratory of Optical Engineering,Chinese Academy of Sciences,Chengdu 610209,China;Fuji Electric Co.Ltd,Tokyo 141-0032,Japan)
机构地区:[1]北京交通大学电气工程学院,北京100044 [2]国网浙江省电力有限公司电力科学研究院,杭州310014 [3]中国科学院光束控制重点实验室,成都610209 [4]富士电机系统株式会社,东京141-0032
出 处:《电工技术学报》2021年第12期2627-2639,共13页Transactions of China Electrotechnical Society
基 金:国网浙江省电力有限公司科技项目(5211DS19003A);国家自然科学基金重点项目(51737001)资助。
摘 要:基于碳化硅(SiC)器件的谐振开关电容变换器(RSCC)因其软开关特性,适用于高频、高功率密度的场合。但是较高的工作频率使其对线路寄生参数较敏感,易造成开关器件的电压尖峰问题。通过分析RSCC叠层母排模型,该文建立含有寄生电感的等效电路,研究寄生电感对电路运行模态的影响,并推导开关器件电压峰值与寄生电感之间的关系。在此基础上,提出优化叠层母排结构和吸收电容的电压尖峰抑制方案,仿真及实验结果验证了该文电压尖峰抑制方案的有效性和可行性。The resonant switched capacitor converter(RSCC)based on silicon carbide(SiC)devices is suitable for high operation efficiency and power density due to its soft switching characteristics.However,the high operation frequency makes it sensitive to the parasitic inductance,which may cause the voltage spike of switching devices.By analyzing the RSCC laminated busbar model,the equivalent circuit with parasitic inductance was built.The influence of parasitic inductance on the operating mode of the circuit was studied,and the relationship between the parasitic inductance and the voltage spike of the switching devices was derived.Accordingly,this paper proposed two voltage spike suppression methods for optimizing the laminated busbar model and the snubber capacitance.Simulation and experimental results verified the effectiveness and feasibility of the voltage spike suppression methods in this paper.
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