一种900V大功率MOSFET器件结构设计  

Structure Design of a 900 V High Power MOSFET Device

作　　者：刘好龙 于圣武 LIU Haolong;YU Shengwu(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110000,China;Nanjing Micro One Electronics Inc.,Nanjing 210042,China)

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110000 [2]南京微盟电子有限公司,南京210042

出　　处：《微处理机》2021年第3期18-22,共5页Microprocessors

摘　　要：鉴于高压功率MOSFET器件在耐压、电流能力、导通电阻等方面固有的优点,为进一步挖掘其在武器装备体系中的关键性作用、更好地发挥其为电子及电机设备提供驱动的功能,设计并实现一款900V大功率MOSFET器件。以VDMOS器件为例分析其基本结构、工作原理和主要参数,通过理论计算制定产品的外延层及栅氧等相关工艺参数,并对元胞尺寸进行了优化设计。终端结构采用场限环与场板相结合的技术,并进行模拟仿真。仿真结果符合预期,并依此给出最终设计版图。In view of the inherent advantages of high-voltage power MOSFET devices in withstand voltage,current capability,on-resistance and so on,a 900 V high power MOSFET device is designed and implemented in order to further tap its key role in weapon equipment system and give full play to its driving function for electronic and motor equipment.Taking VDMOS device as an example,the basic structure,working principle and main parameters are analyzed.The epitaxial layer and gate oxide of the product are formulated by theoretical calculation,and the cell size is optimized.The terminal structure adopts the technology of combining field limiting ring with field plate,and carries out simulation.The simulation results meet the expectations,and the final design layout is given accordingly.

关 键 词：高压MOSFET器件 VDMOS结构 外延层 TCAD仿真 

分 类 号：TN386.1[电子电信—物理电子学]