基于GaN FET的LED微显示单片集成技术研究进展  

Research Progress of Monolithic Integration Technology of LED Microdisplay Based on GaN FET

作　　者：涂睿 刘宏宇 孙润光 厉凯 艾世乐 汤昊 Tu Rui;Liu Hongyu;Sun Runguang;Li Kai;Ai Shile;Tang Hao(College of Material Science and Engineering,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌大学材料科学与工程学院,南昌330031

出　　处：《半导体技术》2021年第6期426-433,共8页Semiconductor Technology

基　　金：江西省自然科学基金资助项目(20192BAB207034)。

摘　　要：发光二极管(LED)微显示技术由于其潜在应用而倍受关注。与主流的基于硅基驱动器的LED微显示技术不同,采用GaN场效应晶体管(FET)驱动的LED微显示技术制作的器件具有可靠性高和制作工艺简单等优势。总结了各种GaN FET驱动LED微显示的器件结构及性能,这些器件结构包括:直接利用LED外延结构制作FET驱动微型LED发光像素的横向集成结构、HEMT驱动微型LED发光像素的横向叠层结构、纳米线GaN FET驱动LED发光像素的垂直叠层结构。对基于GaN FET驱动的LED微显示技术的进展进行了综述。对GaN FET驱动的LED微显示技术的应用前景和研究方向进行了展望。The light-emitting diode(LED)microdisplay technology has attracted great attention due to its potential applications.Differed from the main LED microdisplay technology based on silicon-based drivers,the device fabricated by the GaN FET-based LED microdisplay technology has advantages such as high reliability and simple fabrication process.The structures and performance of various GaN FET-driving LED microdisplay devices are summarized.The device structures include:the lateral integration structure directly using LED epitaxial structure to make micro-LED light-emitting pixels driven by FETs,the lateral laminated structure of HEMT driving micro-LED light-emitting pixels and vertical laminated structure of nanowire GaN FET driving micro-LED light-emitting pixels.The progress of LED microdisplay technology based on GaN FET driving is reviewed.The application and research direction of GaN FET driving LED microdisplay technology are prospected.

关 键 词：单片集成 GaN FET 发光二极管(LED) 微型LED 微显示 

分 类 号：TN312.8[电子电信—物理电子学]