基于异构集成技术的相控阵T/R组件微系统  

A Phased Array T/R Component Microsystem Based on Heterogeneous Integration Technology

作　　者：乔明昌[1] 刘恩达 赵永志[1] 赵宇[1] Qiao Mingchang;Liu Enda;Zhao Yongzhi;Zhao Yu(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第6期440-444,共5页Semiconductor Technology

摘　　要：基于硅基微电子机械系统(MEMS)工艺和三维异构集成技术,研制了一款硅基X波段2×2相控阵T/R组件。该组件采用收发一体多功能芯片方案,将所有器件封装于两层硅基中。其中上层硅基集成了低噪声放大器、功率放大器、开关、电源调制驱动器和PMOSFET等芯片,下层硅基集成了多功能芯片、串/并转换芯片以及逻辑运算芯片;两层硅基封装之间通过植球进行堆叠。最终样品尺寸仅为20 mm×20 mm×3 mm。实测结果显示,在8~12 GHz内,该T/R组件饱和输出功率约为29 dBm,接收增益约为21 dB,接收噪声系数小于3 dB,在具备优良射频性能的同时实现了组件的小型化。Based on the silicon-based micro-electromechanical system(MEMS)technology and three-dimensional heterogeneous integration technology,a silicon-based X-band 2×2 phased array T/R component was developed.The component adopted a transceiver integrated multi-function chip solution,encapsulating all devices in a two-layer silicon base,where the upper silicon base inherited low noise amplifiers,power amplifiers,switches,power modulation drivers,PMOSFETs and other chips,and the lower silicon base integrated multi-function chips,serial-parallel conversion chips and logic operation chips.The two-layer silicon-based package was stacked by ball planting,and the final sample size is only 20 mm×20 mm×3 mm.The measured results show that within 8-12 GHz,the saturated output power of the T/R component is about 29 dBm,the receiving gain is about 21 dB,and the receiving noise figure is less than 3 dB.It has excellent RF performance and realizes the miniaturization of the component.

关 键 词：相控阵 三维集成技术 微系统 收发组件 微电子机械系统(MEMS)工艺 

分 类 号：TN958.92[电子电信—信号与信息处理]