一种基于SIPOS结构的高压深结复合终端  

A high-voltage deep junction composite terminal based on SIPOS structure

作　　者：王振硕 李学宝[1] 马浩[1] 吴昊天 WANG Zhenshuo;LI Xuebao;MA Hao;WU Haotian(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China)

机构地区：[1]华北电力大学新能源电力系统国家重点实验室,北京102206

出　　处：《电子元件与材料》2021年第6期591-596,共6页Electronic Components And Materials

基　　金：国家自然科学基金(52077073)。

摘　　要：为了提高功率芯片的可靠性和耐压能力,结合VLD(横向变掺杂)、JTE(结终端扩展)与SIPOS(半绝缘多晶硅)技术,设计了一种高压深结复合终端结构。所提新结构是在VLD与JTE的复合终端上方覆盖一层SIPOS结构,可以实现终端电场更为均衡,受界面电荷的影响更小,同时具有更高的击穿电压。以3.3 kV耐压等级的终端为例,利用仿真软件TCAD对所提出的新型终端复合结构进行了工艺和结构上的仿真,并且对影响新结构击穿电压的关键因素进行了分析。结果表明,随着SIPOS结构氧含量的减少,新结构的击穿电压不断提高,并且当界面电荷浓度为4×10^(11) cm^(-2)时,新结构仍能满足芯片耐压等级要求。In order to improve the reliability and withstand voltage ability of the power chips,a 3.3 kV high-voltage deep junction composite terminal was proposed by combining SIPOS(Semi-Insulating Poly-Silicon)with VLD(Varied Lateral Doping)and JTE(Junction Termination Extension).The composite terminal of VLD and JTE was covered with SIPOS in the proposed structure,which features in more uniform terminal electric field distribution on its surface,a higher breakdown voltage,and better resistance to the interface charges.Taking the terminal structure with withstand voltage 3.3 kV as an example,the new composite terminal structure was simulated by TCAD.Moreover,the key factors affecting the breakdown voltage of the new structure were analyzed.The result show that the breakdown voltage of the new structure increases as the oxygen content of the SIPOS structure decreases.Besides,when the interfacial charge concentration is 4×10^(11) cm^(-2),the breakdown voltage of the new structure can still meet the requirements of the voltage level of the chip.

关 键 词：终端结构 SIPOS 界面电荷 功率器件 复合终端 

分 类 号：TN386[电子电信—物理电子学]