Band alignment between NiO_(x) and nonpolar/semipolar GaN planes for selective-area-doped termination structure  

作　　者：Ji-Yao Du Ji-Yu Zhou Xiao-Bo Li Tao-Fei Pu Liu-An Li Xin-Zhi Liu Jin-Ping Ao 都继瑶;周继禹;李小波;蒲涛飞;李柳暗;刘新智;敖金平(School of Automation and Electrical Engineering,Shenyang Ligong University,Shenyang 110159,China;Institute of Technology and Science,Tokushima University,Tokushima,Japan;School of Physics,Sun Yat-Sen University,Guangzhou 510275,China)

机构地区：[1]School of Automation and Electrical Engineering,Shenyang Ligong University,Shenyang 110159,China [2]Institute of Technology and Science,Tokushima University,Tokushima,Japan [3]School of Physics,Sun Yat-Sen University,Guangzhou 510275,China

出　　处：《Chinese Physics B》2021年第6期583-587,共5页中国物理B（英文版）

基　　金：supported by the Fund from the Open Project Key Laboratory of Microelectronic Devices and Integrated Technology,China (Grant No. 202006);the Doctoral Research Support Foundation of Shenyang Ligong University,China (Grant No. 1010147000914);the Science and Technology Program of Ningbo,China (Grant No. 2019B10129)。

摘　　要：Band alignment between NiO_(x) and nonpolar GaN plane and between NiO_(x) and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO_(x)/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO_(x) films. By fitting the Ga 3 d spectrum obtained from the NiO_(x)/GaN interface, we find that relatively high Ga–O content at the interface corresponds to a small band offset. On the one hand, the high Ga–O content on the GaN surface will change the growth mode of NiO_(x). On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.

关 键 词：GAN NiO_(x) band alignment vertical diode 

分 类 号：TN311.7[电子电信—物理电子学]