高温高压下氮化镓陶瓷体的制备  

PREPARATION OF GaN CERAMIC UNDER HIGH TEMPERATURE AND HIGH PRESSURE

作　　者：洪瑞金[1] 马贤锋[1] 阎学伟[1] 赵伟[1] 汤华国[1] 

机构地区：[1]中国科学院长春应用化学研究所材料与器件研究室,吉林长春130022

出　　处：《高压物理学报》2002年第4期259-264,共6页Chinese Journal of High Pressure Physics

摘　　要：在高温高压条件下 ,实验成功实现了氮化镓的烧结。首次将氨压应用到陶瓷体的烧结中 ,解决了GaN的分解、原料中残余的氧化物等问题 ,提高了烧结体的结晶度。研究了在氨压条件下温度对烧结致密度的影响。GaN ceramics were obtained under high temperature and high pressure. The use of a pressure of NH3 changed the situations of the decomposition of GaN during sintering, and the remainder of Ga2O3 in the materials and improved the crystallization of GaN as well. The relationship between the density ratio of sintered bodies and temperature was investigated by SEM and Archimedean method.

关 键 词：陶瓷体 制备 氮化镓 高温高压 烧结体 结晶状态 致密度 

分 类 号：TQ174.65[化学工程—陶瓷工业] TN3[化学工程—硅酸盐工业]