高纯锗探测器低本底硅前端电路基板设计  

A Low Background Silicon Front-end Circuit Substrate Technology for High Purity Germanium Detector

作　　者：宋天骁 蔡坚[1,4] 何力 邓智 王谦[1,4] SONG Tian-xiao;CAI Jian;HE Li;DENG Zhi;WANG Qian(Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Department of Engineering Physics,Tsinghua University,Beijing 100084,China;Key Laboratory of Particle&Radiation Imaging,Ministry of Education,Beijing 100084,China;Beijing National Research Center for Information Science And Technology,Beijing 100084,China;Nuctech Company Limited,Beijing 100084,China)

机构地区：[1]清华大学微电子学研究所,北京100084 [2]清华大学工程物理系,北京100084 [3]粒子技术与辐射成像教育部電点实验室,北京100084 [4]北京信息科学与技术国家研究中心,北京100084 [5]同方威视技术股份有限公司,北京100084

出　　处：《核电子学与探测技术》2020年第5期685-689,共5页Nuclear Electronics & Detection Technology

基　　金：国家重点研发计划(2017 YFA0402202)资助。

摘　　要：设计并完成了用于高纯锗探测器的硅基低本底前端电路基板。结合装配需求、基板特征阻抗和工艺可行性完成了尺寸为15 mmX15 mm,包含14个通孔结构的硅基板设计。利用光敏性苯并环丁烯在硅基板上进行焊盘开窗,同时作为金属布线保护性介质。通过微纳加工工艺完成了硅基板的制备,通过ASIC芯片的引线键合.无源器件的表面贴装完成了封装。实验测试表明:硅基板功能良好、噪声水平优于有机基板、可以通过初步的可靠性测试(冷热冲击100个循环、高温储存72h).在连续8h工作中稳定性良好。A silicon-based low background front-end circuit board for high purity germanium de tector is designed and fabricated.A silicon substrate with a 15 mmX15 mm size and 14 through-hole structures on it is designed based on assembly requirements,characteristic impedance of substrate and process feasibility.Benzocyclobutene(BCB)was used to open the pad window and as the dielectric material as well.The silicon substrate was fabricated by micro-nanofabrication technology,and the packaging was completed by wire bonding of ASIC chip and surface mounting of passive devices.The functional test and noise test of the packaged substrate were carried out,and the reliability and working stability of the silicon substrate were tested.

关 键 词：高纯锗探测器 基板技术 硅基板 苯并环丁烯 

分 类 号：TN405[电子电信—微电子学与固体电子学]