高频响MEMS压力传感器设计与制备  被引量:10

Design and Preparation of High Frequency MEMS Pressure Sensor

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作  者:梁庭[1] 薛胜方 雷程[1] 王文涛[1] 李志强[1] 单存良 LIANG Ting;XUE Sheng-fang;LEI Cheng;WANG Wen-tao;LI Zhi-qiang;SHAN Cun-liang(North University of China,Key Laboratory of Instrumentation Science&Dynamic Measurement,Ministry of Education,Shanxi Provincial Key Laboratory of Dynamic Testing Technology,Taiyuan 030051,China)

机构地区:[1]中北大学,仪器科学与动态测试教育部重点实验室,动态测试技术山西省重点实验室,山西太原030051

出  处:《仪表技术与传感器》2021年第6期6-10,共5页Instrument Technique and Sensor

基  金:山西省重点研发计划项目(201903D121123);山西省自然科学基金项目(201801D121157,201801D221203)。

摘  要:高频响MEMS压力传感器,常用于各项高速冲击波动态测试,能够完整地呈现和评估测试当场下的动态效果。高频高压高温芯片的加工与刚性封装外壳是高频响MEMS压力传感器的研究难点。文中通过设计仿真、工艺加工试验及封装测试,设计加工出一种齐平式倒装封装的高频响MEMS压力传感器。完成220℃的温度-压力复合场动态性能测试,补偿后的传感器精度可达±1.5%FS,频响可达375.2 kHz。High-frequency response MEMS pressure sensors are commonly used in various high-speed shock wave dynamic tests,which can completely present and evaluate the dynamic effects on the spot.The processing of high-frequency,high-pressure,and high-temperature chips and the rigid packaging shell are the research difficulties of high-frequency response MEMS pressure sensors.Aiming at these two key points,through design simulation,process testing and packaging testing,a flush-type flip-chip packaged high-frequency response MEMS pressure sensor was designed and processed.Completion of the temperature-pressure composite field dynamic performance test at 220℃,the compensated sensor has an accuracy of±1.5%FS and a frequency response of 375.2 kHz.

关 键 词:高频响 压力传感器 芯片加工 倒装封装 齐平封装 性能测试 

分 类 号:TN303[电子电信—物理电子学]

 

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