6英寸低位错锗单晶生长热场设计  

Design of Thermal Field for 6-Inch Low Dislocation Germanium Single Crystal Growth

作　　者：陈晨[1] 赵堃 韩焕鹏[1] CHEN Chen;ZHAO Kun;HAN Huanpeng(The 46th Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《人工晶体学报》2021年第6期979-986,共8页Journal of Synthetic Crystals

基　　金：国家技术基础科研项目(1905XX000)。

摘　　要：锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大。本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境。研究发现:渐变长度为L/h=1/2、渐变率α为65°的渐变型主加热器热场结构能够获得最佳的热场分布,有利于低位错单晶的生长。经验证,生长的锗单晶热应力较低,位错密度在310~450 cm^(-2)范围内。Germanium wafer have been widely used as substrate in space solar cells.In recent years,after the demand for germanium wafer for germanium-based space solar cells increase from 4 inch to 6 inch,the growth of low-dislocation germanium crystals becomes more difficult.This paper designed a double heaters thermal field system suitable for 6 inch low dislocation germanium single crystal by the Cz method,the thermal field distribution in the case of different shapes of main heaters was simulated.The research found that:the thermal field structure of the gradual main heater with the gradual length of L/h=1/2 and the gradual rateɑof 65°can obtain the best thermal field distribution,which is conductive to the growth of low dislocation density.It has been verified that the thermal stress of germanium single crystal is reduced,and the dislocation density can be controlled within 310 cm-2 to 450 cm^(-2).

关 键 词：锗 单晶生长 热场 加热器 温度梯度 位错密度 

分 类 号：O78[理学—晶体学]