热处理V膜制备VO_(2)薄膜的结构和光电性能  

Structure and Optical–Electric Properties of VO_(2) Films Prepared by Annealing V Films

作　　者：袁文辉 刘保顺[2] YUAN Wenhui;LIU Baoshun(Wuhan Global Sensor Technology Co.Ltd.,Wuhan 430205,China;State Key Laboratory of Silicate Materials for Architectures,Wuhan University of Technology,Wuhan 430070,China)

机构地区：[1]武汉高芯科技有限公司,武汉430205 [2]硅酸盐建筑材料国家重点实验室,武汉理工大学,武汉430070

出　　处：《硅酸盐学报》2021年第6期1151-1156,共6页Journal of The Chinese Ceramic Society

基　　金：国家重点研发计划政府间国际科技创新合作重点专项(2017YFE0192600);国家自然科学基金面上项目(51772230)。

摘　　要：先用磁控溅射法在石英玻璃基片上制备了金属V膜,然后经过真空退火处理被转变为VO_(2)薄膜。研究了退火温度对VO_(2)薄膜表面形貌、晶体结构、光学性能和电学性能的影响。结果表明:随着退火温度由300℃增加到450℃,VO_(2)薄膜的结晶度明显增加。退火温度在400℃和450℃制备的样品是高纯M相单斜结构,晶粒发育较好,晶界清晰。不同温度退火的样品的表面V元素包含由4+和5+态,5+态的出现是由于表面V元素受环境中氧化导致。虽然退火温度的改变对VO_(2)薄膜的可见光透过率无明显影响,但是可以改善对太阳光的调节效率。VO_(2)薄膜半导体-金属相变温度和半导体相的电阻随热处理温度增加而增加,在400℃和450℃退火样品电阻相变前后的变化幅度可达2个数量级,450℃退火制备样品的滞后宽度和半导体金属相变临界温度分别为14.6℃和61.0℃。Metal V films were prepared on quartz substrates via magnetron sputtering,and then converted to VO_(2) films via vacuum annealing.The effect of annealing temperature on the surface morphologies,crystalline structures,optical properties and electric properties of VO_(2) films was investigated.The results show that the crystallinity of the films increases with the increase of annealing temperature from 300℃to 450℃.The films annealed at 400℃and 450℃are a pure monoclinic phase.The grains grow better and the grain boundaries are clear.The valent states of V element for different samples include+4 and+5 states.The presence of V5+in the films is due to the oxidation in atmosphere.The annealing temperature has little effect on the visible transmittance,but the solar modulation efficiency increases.The metal-insulator transition(MIT)temperature and the resistance of semiconductor phase increase with increasing the annealing temperature.The resistance change amplitude across the MIT for the films annealed at 400℃and450℃is more than 2 orders of magnitude.The hysteresis width and the MIT temperature of the film annealed at 450℃are 14.6℃and 61.0℃,respectively.

关 键 词：二氧化钒薄膜 磁控溅射 真空退火 半导体–金属相变 

分 类 号：O484.4[理学—固体物理]