1310 nm高功率超辐射发光二极管的制备及性能研究  

Performance Research and Fabrication of 1 310 nm Superluminescent Diodes with High Power

作　　者：王拓 陈红梅[2] 贾慧民[1] 姚中辉 房丹[1] 蒋成 张子旸[2] 李科学 唐吉龙[1] 魏志鹏[1] WANG Tuo;CHEN Hongmei;JIA Huimin;YAO Zhonghui;FANG Dan;JIANG Cheng;ZHANG Ziyang;LI Kexue;TANG Jilong;WEI Zhipeng(State Key Laboratory of Hight Power Seminconductor Laser,College of Science,Changchun University of Science and Technology,Changchun 130022,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Science,Suzhou,Jiangsu 215123,China)

机构地区：[1]长春理工大学理学院高功率半导体激光国家重点实验室,长春130022 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《光子学报》2021年第6期179-187,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.61674021,11674038,11804335,61875222);吉林省科技发展计划(No.20200301052RQ)。

摘　　要：为优化1310 nm超辐射发光二极管输出性能,提高器件输出功率,针对J型波导结构的1310 nm超辐射发光二极管的波导结构参数及器件散热能力进行研究。结果表明波导刻蚀深度、弯曲角度和绝缘层厚度是影响器件实现高功率输出的重要因素。基于研究结果对超辐射发光二极管器件结构及工艺进行优化,制备出脊宽5μm、弯曲角度8°、刻蚀深度1.7μm、绝缘层厚300 nm的J型超辐射发光二极管。该器件在室温及500 mA连续注入电流条件下,直波导长度1.5 mm时实现10 nm宽的输出光谱,输出功率达到42.2 mW。In order to optimize the performance of the 1310 nm superluminescent diode,such as increase the output power of the device.In this simulation,the parameters of waveguide structure,and the heat dissipation for 1310 nm superluminescent diode with the J-type waveguide have been investigated.The research results show that the waveguide etching depth,bending angle and thickness of the insulating layer were important for achieve high power output.Based on the research results,the superluminescent diode device structure and fabrication process were optimized,and J-type superluminescent diode with a ridge width of 5μm,a bending angle of 8°,an etching depth of 1.7μm and an insulating layer thickness of 300 nm was prepared.The superluminescent diode with 1.5 mm straight waveguide length has realized a high output power(42.2 mW)and wide bandwidth(10 nm)under 500 mA continuous-wave operation at room temperature.

关 键 词：超辐射发光二极管 J型波导 波导损耗 模拟分析 输出性能 

分 类 号：TN312.8[电子电信—物理电子学]