10 nm制程用电子级氢氟酸中痕量阴离子分析方法  

Determination of trace anion in electronic grade hydrofluoric acid for 10 nm platform process

作　　者：高一鸣 郝萍[1] 田玉平[1] 曹建雄 陈鹰[1] 李春华[1] Gao Yiming;Hao Ping;Tian Yuping;Cao Jianxiong;Chen Ying;Li Chunhua(Shanghai Institute of Measurement and Testing Technology)

机构地区：[1]上海市计量测试技术研究院

出　　处：《上海计量测试》2021年第3期6-8,共3页Shanghai Measurement and Testing

摘　　要：建立了一种在集成电路产业所需洁净环境下测试电子级氢氟酸中痕量阴离子的分析方法。对测试的环境、容器、耗材、试剂等加以要求,以此为基础进行电子级氢氟酸中痕量阴离子的分析。经考察,Cl^(-)、Br^(-)、NO_(3)^(-)、SO_(4)^(2-)、PO_(4)^(3-)五种阴离子检出限73~298 ng/L,定量限242~993 ng/L,连续进样6次,RSD<5%,线性相关系数≥0.999,1.0μg/L加标回收率91%~105%。用该方法对电子级氢氟酸中痕量阴离子进行检测,结果良好,可满足10 nm制程用电子级氢氟酸中痕量阴离子的检测要求。An analytical method for testing trace anions in electronic grade hydrofluoric acid in a clean environment required by the integrated circuit industry has been established.It is the basis for the analysis of trace anions in electronic grade hydrofluoric acid,such as test environment,containers,consumables,reagents,etc.The LOD of Cl^(-),Br^(-),NO_(3)^(-),SO_(4)^(2-),PO_(4)^(3-) was 73-298 ng/L,LOQ was 242-993 ng/L.The RSD was <5% for 6 injections.The linear correlation coefficient of the calibration curve was ≥0.999,The recovery rate of 1.0μg/L was 91%-105%.This method could meet the detection requirements of trace anions in electronic grade hydrofluoric acid used in the 10 nm platform process.

关 键 词：氢氟酸 离子色谱法 阴离子 

分 类 号：TN40[电子电信—微电子学与固体电子学] TQ124.3[化学工程—无机化工]