一种新型MCP离子阻挡膜制备工艺研究  

Study on a New Preparation Process of MCP Ion Barrier

作　　者：汪述猛[1] 唐光华[1] 杨炳辰 WANG Shumeng;TANG Guanghua;YANG Bingchen(The 55th Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,CHN)

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《光电子技术》2021年第2期132-134,142,共4页Optoelectronic Technology

摘　　要：三代微光像增强管需在所使用的微通道板(microchannel plate,MCP)输入面制备离子阻挡膜,以阻挡正离子轰击NEA光电阴极,维持和提高器件使用寿命。为此,研究开发了一种新的MCP离子阻挡膜制备工艺,先采用专用胶体填充MCP微孔,再用电子束蒸发Al_(2)O_(3)膜,蒸发速率为0.05 nm/s,蒸镀后用异丙醇去除微孔中的胶体。实验结果表明,该工艺制备的MCP离子阻挡膜具有膜基结合强度高、通孔面积小、成像质量一致性高等优点,满足三代像增强管对MCP离子阻挡膜的要求。The third generation low-light-level image intensifier needed to prepare ion barrier on the input surface of channel plate,ion barrier was used to prevent positive ions from bombarding the NEA photocathode and improve the service life of the device.A new MCP ion barrier fabrication process was developed.Firstly,the MCP pore was filled with special colloid.Then the Alumina film was evaporated by electron beam,and the evaporation rate was 0.05 nm/s.Finally,isopropanol was used to remove the colloid in the pore.The experimental results showed that the ion barrier fabricated by the modified process had the advantages of low bonding strength,small area of high pass hole and high imaging quality,and could meet the requirements of the third generation image intensifier tube.

关 键 词：离子阻挡膜 电子束蒸发 微通道板 Al_(2)O_(3)膜 胶体填孔 

分 类 号：TN223[电子电信—物理电子学]