氢注入在硅异质结太阳电池a-Si:H窗口层中的研究  

INVESTIGATION OF ATOMIC-HYDROGEN INJECTION IN a-Si:H WINDOW LAYERS OF SILICON HETEROJUNCTION SOLAR CELLS

作　　者：陈仁芳[1,2] 张丽平 吴卓鹏[1,2] 李振飞 孟凡英[1,2] 刘正新 Chen Renfang;Zhang Liping;Wu Zhuopeng;Li Zhenfei;Meng Fanying;Liu Zhengxin(Research Center for New Energy Technology,Shanghai Institute of Microsystem and Information Technology,Chinese A cademy of Sciences,Shanghai 201800,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所新能源技术中心,上海201800 [2]中国科学院大学,北京100049

出　　处：《太阳能学报》2021年第6期103-108,共6页Acta Energiae Solaris Sinica

基　　金：中科院先导专项A(XDA17020403);国家自然科学基金面上项目(62074153);上海市科技创新行动计划项目(20dz1207103,19DZ1207602)。

摘　　要：基于热丝化学气相沉积(Cat-CVD)系统开展氢注入对超薄(<10 nm)氢化非晶硅(a-Si:H)薄膜特性改善的研究,发现适当的氢注入可提高薄膜内的氢含量、降低其微结构因子并展宽其光学带隙。将该方法用于处理硅异质结(SHJ)太阳电池入光侧的本征非晶硅(i-a-Si:H)及N型非晶硅(n-a-Si:H)薄膜钝化层,可显著提升晶体硅的表面钝化质量。通过使用AFORSHET软件模拟SHJ太阳电池入光面的界面缺陷及n-a-Si:H体缺陷对电池性能的影响,分析得到:将氢注入用于处理a-Si:H窗口层,SHJ太阳电池性能的提升源于电池入光侧界面及a-Si:H体材料的结构改善。电池的开路电压(Voc,728.4~736.1 mV)、短路电流密度(Jsc,37.99~38.20 mA/cm2)、填充因子(FF,79.67%~81.07%)及转换效率(Eff,22.04%~22.79%)均得到明显提升。In this study,the effect of hydrogen injection on ultrathin(<10 nm)hydrogenated amorphous silicon(a-Si:H)films by catalytic chemical vapor deposition(Cat-CVD)system is investigated.By applying a proper hydrogen injection process,the hydrogen contents is increased in the a-Si:H film.Simultaneously,the optical bandgaps are broadened is enhanced acwmpanied with microstructural factors being reduced.When the process is applied to i-or n-a-Si:H window layers of n-type rear-emitter SHJ solar cells,passivation qualities are improved apparently.The numerical analysis by AFORS-HET further demonstrates that the improved performance of solar cells originates from the reduced defect densities at the front i-a-Si:H/c-Si interface as well as in the n-a-Si:H bulk.As a consequence of the improved interface quality and a-Si:H bulk properties at the front side,the characteristics of SHJ solar cells is enhanced significantly(Vocfrom 728.4 to 736.1 mV,Jscfrom 37.99 to 38.20 mA/cm2,FF from 79.67%to 81.07%and Eff from22.04%to 22.79%).

关 键 词：氢注入 硅异质结太阳电池 非晶硅薄膜 钝化 缺陷态 

分 类 号：TM914.41[电气工程—电力电子与电力传动]