衬底浮空的新型绝缘体上硅基横向功率器件分析  

Analysis of novel silicon based lateral power devices with floating substrate on insulator

作　　者：唐春萍 段宝兴[1] 宋坤 王彦东 杨银堂[1] Tang Chun-Ping;Duan Bao-Xing;Song Kun;Wang Yan-Dong;Yang Yin-Tang(Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Ministry of Education,School of Microelectronics,Xidian University,Xi’an 710071,China;Xi’an Microelectronics Technology Institute,Xi’an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]西安微电子技术研究所,西安710071

出　　处：《物理学报》2021年第14期326-333,共8页Acta Physica Sinica

基　　金：陕西省杰出青年学者科学基金(批准号:2018JC-017);111项目(批准号:B12026)资助的课题.

摘　　要：针对有机半导体领域的发展要求,报道了一种能够应用于有机半导体领域衬底浮空的新型SOI LDMOS(silicon on insulator lateral double-diffused metal oxide semiconductor)功率器件,不同于传统无机半导体中SOI LDMOS功率器件,该新型器件可以与绝缘的柔性衬底结合应用于有机半导体领域,这给有机半导体领域的研究方向提供了新的可能.本文通过仿真和流片实验共同验证了当常规SOI LDMOS缺失衬底电极后,比导通电阻和阈值电压均无明显变化,但击穿电压会因为缺失衬底电极和纵向电场而下降15%左右.针对该现象提出了一个具有表面衬底电极和漂移区氧化槽的新型SOI LDMOS功率器件,该新型器件能够重新给衬底提供电极、优化横纵向电场、不明显改变比导通电阻与阈值电压,同时将常规SOI LDMOS的击穿电压提高57.54%,缓解了应用于有机半导体领域带来的不良影响.为传统功率半导体应用于有机半导体领域的研究提供了可能,对于有机半导体研究领域的拓展具有创新意义.With the rapid development of the traditional inorganic semiconductor industry,the improvement of its electrical performance is gradually approaching to the limit.It is difficult to continue to improve the performance,lessen the size,and reduce the cost.Therefore,organic semiconductor materials and devices with simple process and low cost have been found and gradually become a new research hotspot.Although organic semiconductor materials and devices are developing rapidly,their electrical properties,such as carrier mobility,are considerably inferior to those of inorganic semiconductors,and their research direction and application prospect are relatively fixed and single.They are developed only in display,sensing,photoelectric conversion and other fields,but the researches on switching power devices,integrated circuits and other fields are still relatively blank.At the same time,power devices are used only in the field of inorganic semiconductors.Therefore,in order to expand the research direction of organic semiconductors and power devices at the same time,a novelsilicon on insulator lateral double-diffused metal oxide semiconductor(SOI LDMOS)power device is reported in this paper.Unlike the SOI LDMOS power devices in traditional inorganic semiconductors,this novel device can be used in the field of organic semiconductors by combining with insulated flexible substrates,which provides a new possibility for the research direction of organic semiconductors.In this paper,both simulation and experiment verify that specific on-resistance(RON,sp)and threshold voltage(VTH)do not change significantly when the conventional SOI LDMOS lacks the substrate electrode,but the breakdown voltage decreases by about 15%due to the absence of the substrate electrode or the longitudinal electric field.In response to this phenomenon,in this paper proposed is a novel SOI LDMOS power device that possesses surface substrate electrodes and drift zone oxide trenches.This novel device can provide electrodes for the substrate again,optimize th

关 键 词：绝缘体上硅基 衬底电极 击穿电压 氧化槽 

分 类 号：TN386[电子电信—物理电子学]