磁控溅射制备大面积原子级平滑超低电阻率TiN薄膜电极  

Preparation of largescale smooth TiN thin film electrode with ultra low resistivity by magnetron sputtering

作　　者：田忠杰 史淑艳[1] 陈琦磊 芮祥新 黄新宇 孙纳纳 周大雨[1] TIAN Zhongjie;SHI Shuyan;CHEN Qilei;RUI Xiangxin;HUANG Xinyu;SUN Nana;ZHOU Dayu(Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education),School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China;Hefei Adchem Semi-Tech Ltd., Hefei 230088, China)

机构地区：[1]大连理工大学材料科学与工程学院,三束材料改性教育部重点实验室,辽宁大连116024 [2]合肥安德科铭半导体科技有限公司,合肥230088

出　　处：《功能材料》2021年第7期7012-7017,共6页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51972037);合肥安德科铭半导体科技有限公司资助项目(DP0011809)。

摘　　要：利用射频反应磁控溅射法制备了大面积原子级平滑的TiN薄膜电极,针对衬底偏压对TiN电极性能与结构的影响进行了系统探究。采用四探针方阻测试仪、XPS、GIXRD和AFM等测试手段对TiN薄膜电极的电阻率、化学成分、择优取向、表面形貌及薄膜均匀性进行表征分析。结果表明,施加-200 V衬底偏压可获得超低电阻率的TiN薄膜电极。采用最佳衬底偏压在4英寸单晶硅衬底上沉积的TiN电极薄膜具有较好的均匀一致性。最后将该TiN薄膜电极集成在HfO2薄膜电容器中,该电容器展现出良好的顺电性能和低漏电特性。In this work,large scale smooth TiN thin film electrode is prepared by RF reactive magnetron sputtering.The effect of substrate bias on the performance and structure of TiN electrode is investigated systematically.The resistivity,composition,preferred orientation,surface morphology and film uniformity of TiN electrodes are characterized by four-point-probe,XPS,GIXRD and AFM.The results show that TiN thin films with ultra-low resistivity can be obtained when a substrate bias of-200 V is applied.At the optimized substrate bias,the TiN electrode deposited on a 4-inch monocrystalline silicon substrate has a good uniformity and consistency.Finally,a HfO2 MIM capacitor using TiN electrodes is fabricated and tested to shows an excellent paraelectric performance and a low leakage current density.

关 键 词：射频反应磁控溅射 TiN电极薄膜 表面粗糙度 电阻率 

分 类 号：TB34[一般工业技术—材料科学与工程]