Si、Si-Fe合金助熔法制备SiC研究  

Study on the SiC growth from Si and Si-Fe alloy

作　　者：李亚琼[1] 张彦辉 张立峰 LI Yaqiong;ZHANG Yanhui;ZHANG Lifeng(School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing,Beijing, 100083, China;State Key Laboratory of Metastable Materials Science and Technology, Yanshan University,Qinhuangdao 066004, China)

机构地区：[1]北京科技大学冶金与生态工程学院,北京100083 [2]燕山大学亚稳材料制备技术与科学国家重点实验室,河北秦皇岛066044

出　　处：《功能材料》2021年第7期7158-7161,7196,共5页Journal of Functional Materials

基　　金：中央高校基础科研业务费专项基金资助项目(FRF-BD-20-04A);河北省省级科技计划资助项目(20311004D,20311005D,20311006D,20591001D)。

摘　　要：助熔剂法是一种高效生长SiC晶体的方法。本文采用助溶剂法对比考察了Si、Si-Fe合金熔体中SiC晶体生长行为特征,并结合光学显微镜以及电子显微探针对SiC晶体进行分析。研究发现,Si、Si-Fe合金熔体中SiC晶体均以SLS机制生长,受C在两种介质中溶解度的影响,Si熔体中SiC析出尺寸较小,10~50μm,排列成线状分布在样品外侧;Si-Fe熔体中SiC晶体析出尺寸较大,50~200μm,分散在样品中。The characteristics of SiC crystal growth from Si and Si-Fe alloy melts are investigated with the help of optical microscope and electron probe micro-analysis.It is found that the SiC crystals growth from Si and Si-Fe alloy melts follows the SLS mechanism.Influenced by the solubility of C in the two Si-based melts,the size of SiC crystals in Si melts is small,ranging from 10μm to 50μm,which precipitates in a line in the outer region of the sample.The size of SiC crystals in Si-Fe is large,ranging from 50μm to 200μm,which disperses in the whole sample.

关 键 词：助溶剂法 SIC Si-Fe合金 SI 

分 类 号：TF114[冶金工程—冶金物理化学] TF89