基于薄膜HIC金铝键合失效的工艺研究  

Research on Thin-Film HIC Process Based on Gold-Aluminum Bonding Failure

作　　者：杨镓溢 王旭光 秦文龙 杨亮亮 YANG Jiayi;WANG Xuguang;QIN Wenlong;YANG Liangliang(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第3期347-350,共4页Microelectronics

摘　　要：介绍了薄膜混合集成电路(HIC)中金铝键合失效机理,提出了一种解决金铝键合失效的新工艺。分析失效机理发现,铝丝和薄膜金导带形成的金铝界面因原子扩散而形成内部空洞,出现键合根部的键合丝断裂的现象。通过改变键合区金属层结构,实现了单一金属化系统,有效避免了金属间化合物的形成。该项研究结果对陶瓷基薄膜HIC的工艺应用范围的拓宽具有参考价值。The failure mechanism of Au/Al bonding in thin film HICs were introduced,a new technique to solve Au/Al bonding failure was proposed.It was found that the Au/Al interface formed by the aluminum wire and the Au guide band of the film was cavitated by atomic diffusion,and the bonding wires at the root of the bond were broken.By changing interlaminar structure in the bonding zone,the single metallization system was realized,and the formation of intermetallic compounds was effectively avoided.The results of this study had reference value for broadening the applications of ceramic based thin film HICs.

关 键 词：薄膜混合集成电路 金铝键合 层结构 

分 类 号：TN44[电子电信—微电子学与固体电子学] TN405.96